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RPM-075PTT86600NM

产品描述Photo Transistor, 800nm
产品类别光电子/LED    光电   
文件大小69KB,共3页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
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RPM-075PTT86600NM概述

Photo Transistor, 800nm

RPM-075PTT86600NM规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codeunknown
Coll-Emtr Bkdn Voltage-Min20 V
配置SINGLE
最大暗电源500 nA
红外线范围YES
标称光电流0.4 mA
功能数量1
最高工作温度85 °C
最低工作温度-30 °C
光电设备类型PHOTO TRANSISTOR
峰值波长800 nm
形状RECTANGULAR
尺寸1.4 mm
Base Number Matches1

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RPM-075PT
Sensors
Phototransistor, surface mount type
RPM-075PT
RPM-075PT is photo transistor of the top view type. Molded with transparent resin, and can be used for visible light
source. Also, can be used for illuminance sensor. Small and light weight package which can be used for reflow soldering
and Pb free soldering.
Application
Control of lighting cellular phones, LCD displays, etc.
Control of strobe. (DSC, camcorder, etc.)
External dimensions
(Unit : mm)
Unspecified tolerance
shall be
±0.1
(0.15)
Emitter mark
Features
1) Small (2125) and light weight package (3mg) which
can be used for reflow soldering and Pb free
soldering.
2) Linear against wide range of illuminance from a few
Lx to 10000Lx over.
3) Use Si good for an environ ment. (not CdS)
4) It can be used for visible light source.
2
1.4
2.0
+0.2
−0
1.25
1.2
0.25
1
1
2
0.8
Emitter
Collector
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Limits
20
5
10
50
−30
to
+85
−40
to
+100
Unit
V
V
mA
mW
°C
°C
Electrical and optical characteristics
(Ta=25°C)
Parameter
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
Symbol
I
C
I
CEO
λ
P
V
CE(sat)
θ
1/2
tr·tf
Min.
0.25
Typ.
0.4
800
±60
10
Max.
0.6
0.5
0.4
Unit
mA
µA
nm
V
deg
µs
Conditions
V
CE
=
5V, E
=
500Lx
V
CE
=
10V (Black box)
I
C
=
0.1mA, E
=
500Lx
V
CC
=
5V, I
C
=
1mA, R
L
=
100Ω
Rev.A
1/2

 
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