IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
Reach Compliance Code | unknown |
最长访问时间 | 2.5 ns |
最大时钟频率 (fCLK) | 250 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-PQFP-G100 |
JESD-609代码 | e0 |
内存密度 | 4194304 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 32 |
端子数量 | 100 |
字数 | 131072 words |
字数代码 | 128000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 128KX32 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | QFP |
封装等效代码 | QFP100,.63X.87 |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK |
并行/串行 | PARALLEL |
电源 | 2.5/3.3,3.3 V |
认证状态 | Not Qualified |
最大待机电流 | 0.01 A |
最小待机电流 | 3.14 V |
最大压摆率 | 0.5 mA |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子节距 | 0.635 mm |
端子位置 | QUAD |
Base Number Matches | 1 |
UPD4442322GF-A40 | UPD4442322GF-A50 | UPD4442362GF-A50C | UPD4442162GF-A50C | UPD4442322GF-C50 | UPD4442182GF-C50 | UPD4442162GF-A44 | UPD4442182GF-A50 | UPD4442182GF-A40 | |
---|---|---|---|---|---|---|---|---|---|
描述 | IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC | IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC | IC,SYNC SRAM,128KX36,CMOS,QFP,100PIN,PLASTIC | IC,SYNC SRAM,256KX16,CMOS,QFP,100PIN,PLASTIC | IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC | IC,SYNC SRAM,256KX18,CMOS,QFP,100PIN,PLASTIC | IC,SYNC SRAM,256KX16,CMOS,QFP,100PIN,PLASTIC | IC,SYNC SRAM,256KX18,CMOS,QFP,100PIN,PLASTIC | IC,SYNC SRAM,256KX18,CMOS,QFP,100PIN,PLASTIC |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknow | unknow | unknow |
最长访问时间 | 2.5 ns | 3 ns | 3 ns | 3 ns | 3 ns | 3 ns | 2.8 ns | 3 ns | 2.5 ns |
最大时钟频率 (fCLK) | 250 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 225 MHz | 200 MHz | 250 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 4194304 bit | 4194304 bit | 4718592 bit | 4194304 bit | 4194304 bit | 4718592 bit | 4194304 bi | 4718592 bi | 4718592 bi |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 32 | 32 | 36 | 16 | 32 | 18 | 16 | 18 | 18 |
端子数量 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
字数 | 131072 words | 131072 words | 131072 words | 262144 words | 131072 words | 262144 words | 262144 words | 262144 words | 262144 words |
字数代码 | 128000 | 128000 | 128000 | 256000 | 128000 | 256000 | 256000 | 256000 | 256000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 128KX32 | 128KX32 | 128KX36 | 256KX16 | 128KX32 | 256KX18 | 256KX16 | 256KX18 | 256KX18 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | QFP | QFP | QFP | QFP | QFP | QFP | QFP | QFP | QFP |
封装等效代码 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
电源 | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5,3.3 V | 2.5 V | 2.5 V | 3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大待机电流 | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
最小待机电流 | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 2.38 V | 2.38 V | 3.14 V | 3.14 V | 3.14 V |
最大压摆率 | 0.5 mA | 0.42 mA | 0.42 mA | 0.42 mA | 0.42 mA | 0.42 mA | 0.46 mA | 0.42 mA | 0.5 mA |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm |
端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
厂商名称 | - | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
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