TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4A I(D),TO-220AB
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| Reach Compliance Code | compliant |
| 配置 | Single |
| 最大漏极电流 (Abs) (ID) | 4 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 50 W |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| MTP4N10 | IRF710 | IRF711 | MTP2N20 | MTP4N08 | IRF612 | IRF613 | IRF511 | IRF513 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,5.6A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4.9A I(D),TO-220AB |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | compliant | compliant | unknown | compliant | compliant | unknown | unknown | compliant | compliant |
| 配置 | Single | Single | Single | Single | Single | Single | Single | Single | Single |
| 最大漏极电流 (Abs) (ID) | 4 A | 2 A | 2 A | 2 A | 4 A | 2.6 A | 2.6 A | 5.6 A | 4.9 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 50 W | 36 W | 36 W | 50 W | 50 W | 43 W | 43 W | 43 W | 43 W |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 厂商名称 | - | National Semiconductor（TI ） | National Semiconductor（TI ） | - | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） |
| 最大漏极电流 (ID) | - | - | - | - | 4 A | 2.6 A | 2.6 A | 5.6 A | 4.9 A |
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