CMLT2907A
SURFACE MOUNT
DUAL PNP
SILICON TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2907A
consists of two individual, isolated 2907A PNP
silicon transistors, manufactured by the epitaxial
planar process and epoxy molded in an SOT-563
surface mount package. This PICOmini™ devices has
been designed for small signal general purpose and
switching applications.
MARKING CODE: L07
SOT-563 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
60
60
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
10
ICBO
VCB=50V, TA=125°C
10
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
VCE=30V, VBE=0.5V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V,
VCE=10V,
VCE=10V,
IC=1.0mA
IC=10mA
IC=150mA
50
60
60
5.0
0.4
1.6
1.3
2.6
75
100
100
100
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
300
VCE=10V, IC=500mA
R2 (20-January 2010)
CMLT2907A
SURFACE MOUNT
DUAL PNP
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued:
SYMBOL
fT
Cob
Cib
ton
td
tr
toff
ts
tf
TEST CONDITIONS
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=2.0V, IC=0, f=1.0MHz
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
MIN
200
MAX
8.0
30
45
10
40
100
80
30
UNITS
MHz
pF
pF
ns
ns
ns
ns
ns
ns
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: L07
R2 (20-January 2010)
w w w. c e n t r a l s e m i . c o m
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