电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MA21D382G

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 30V V(RRM), Silicon, SMINI2-F2, 2 PIN
产品类别分立半导体    二极管   
文件大小429KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
标准
下载文档 详细参数 选型对比 全文预览

MA21D382G概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 30V V(RRM), Silicon, SMINI2-F2, 2 PIN

MA21D382G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明R-PDSO-F2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
应用GENERAL PURPOSE
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.42 V
JESD-30 代码R-PDSO-F2
最大非重复峰值正向电流30 A
元件数量1
相数1
端子数量2
最大输出电流1.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压30 V
最大反向恢复时间0.013 µs
表面贴装YES
技术SCHOTTKY
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA21D38
Silicon epitaxial planar type
For high frequency rectification
1.25
±0.10
0.60
±0.10
Unit: mm
0.58
+0.02
–0.03
Features
I
F(AV)
=
1
A rectification is possible
Low forward voltag V
F
High non-repetitive peak forward surge voltage 
1
1.90
±0.10
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
V
R
2
2.50
±0.10
0.30
±0.10
0.16
+0.1
–0.06
Symbol
V
RM
Maximum peak reverse voltage
Forward current (Average)
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Rating
30
30
Unit
V
V
0 to 0.1
0.80
±0.10
I
F(AV)
I
FSM
T
j
1.0
20
A
A
Non-repetitive peak forward surge
current
*
Junction temperature
Storage time
125
°C
°C
1: Anode
2: Cathode
SMini2-F2 Package
T
stg
–55 to +125
Marking Symbol:
3U
Note) *: The peak-to-peak value in one cycle of
50
Hz sine wave (non-repetitive)
Electrical Characteristics
T
a
=
25°C±3°C
Parameter
Symbol
V
F1
V
F2
V
F3
I
R
C
t
t
rr
Forward voltage
Conditions
Min
Typ
Max
0.38
0.40
0.42
100
Unit
V
I
F
=
0.5
A
I
F
=
0.7
A
I
F
=
1.0
A
0.34
0.36
0.38
40
13
/D
isc
Terminal capacitance
on
Reverse current
tin
ue
di
V
R
=
30
V
V
R
=
10
V, f =
1
MHz
2.
This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*: t
rr
measurement circuit
Ma
int
en
Note)
1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
an
ce
Reverse recovery time
*
I
F
= I
R
=
100
mA, I
rr
=
10
mA,
R
L
=
100
Pl
Bias Application Unit (N-50BU)
Input Pulse
t
p
10%
Output Pulse
t
r
t
I
F
t
rr
t
A
V
R
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
rr
= 10 mA
I
F
= I
R
= 100 mA
R
L
= 100
1.45
±0.20
µA
pF
ns
0 to 0.15
Publication date: November
2004
SKH00138BED
1

MA21D382G相似产品对比

MA21D382G MA21D3800L
描述 Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 30V V(RRM), Silicon, SMINI2-F2, 2 PIN DIODE SCHOTTKY 30V 1A SMINI2
二极管类型 RECTIFIER DIODE 肖特基

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 665  64  1736  430  2544  14  2  35  9  52 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved