SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low R
DS(ON)
= .33Ω
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
PARTMARKING DETAIL -
ZVN4306
ZVN4306G
D
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
60
2.1
15
±
20
3
-55 to +150
UNIT
V
A
A
V
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
SYMBOL MIN.
60
BV
DSS
V
GS(th)
I
GSS
I
DSS
12
0.22
0.32
0.7
350
140
30
8
25
30
16
0.33
0.45
1.3
UNIT CONDITIONS.
V
I
D
=1mA, V
GS
=0V
V
nA
µA
µA
A
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
V
GEN
=10V, I
D
=3A
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=10V, V
GS
=10V
V
GS
=10V, I
D
=3A
V
GS
=5V, I
D
=1.5A
V
DS
=25V,I
D
=3A
3
20
10
100
On-State Drain
I
D(on)
Current(1)
Static Drain-Source
R
DS(on)
On-State Resistance (1)
Forward
Transconductance (1)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=25 V, V
GS
=0V, f=1MHz
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 411
ZVN4306G
TYPICAL CHARACTERISTICS
12
11
7V
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
V
GS=
20V 12V 10V 9V 8V
R
DS(on)
-Drain Source On Resistance
(Ω)
V
GS
=3V
10
3.5V
5V 6V
I
D
- Drain Current (Amps)
6V
1.0
5V
8V
10V
4V
3.5V
3V
10
0.1
0.1
1
10
100
V
DS
- Drain Source
Voltage (Volts)
I
D-
Drain Current
(Amps)
Saturation Characteristics
On-resistance v drain current
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25
D
eR
nc
ta
sis
)
on
S(
5
g
fs
-Transconductance (S)
V
GS=
10V
I
D=
3A
4
3
2
1
V
DS=
10V
Re
ce
ur
o
-S
ain
Dr
V
GS=
V
DS
I
D=
1mA
Gate Threshold Voltage V
GS(TH)
0 25 50 75 100 125 150 175 200 225
0
0
2
4
6
8
10
12
14
16
18
20
T
j
-Junction Temperature (°C)
I
D(on)
- Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
Transconductance v drain current
500
16
V
GS
-Gate Source Voltage (Volts)
14
12
10
8
6
4
2
0
0 1
I
D=
3A
V
DD
=
20V
40V
60V
C-Capacitance (pF)
400
300
200
100
0
0
10
20
30
40
50
C
iss
C
oss
C
rss
60
70
80
2
3
4
5
6
7
8
9
10 11 12
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 412
GD32 MCU
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