SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
* 60 Volt V
DS
* R
DS(on)
=14Ω
PARTMARKING DETAIL ML
COMPLEMENTARY TYPE ZVN3306F
ZVP3306F
D
S
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-60
-90
-1.6
±
20
SOT23
UNIT
V
mA
A
V
mW
°C
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
60
50
25
8
8
8
8
8
-400
14
-60
-1.5
-3.5
20
-0.5
-50
V
V
nA
µ
A
µ
A
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
I
D
=-1mA, V
GS
=0V
I
D
=-1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=-60 V, V
GS
=0V
V
DS
=-48 V, V
GS
=0V, T=125°C
(2)
V
DS
=-18 V, V
GS
=-10V
V
GS
=-10V, I
D
=-200mA
V
DS
=-18V, I
D
=-200mA
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
≈
-18V, I
D
=-200mA
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 -434
ZVP3306F
TYPICAL CHARACTERISTICS
-10
-1.0
I - Drain Current (Amps)
-8
I
D=
-400mA
-0.8
V
GS
=
-16V
-14V
-12V
-6
-0.6
-10V
-9V
-8V
-7V
-6V
-5V
-4.5V
0
-2
-4
-6
-8
-10
Drain Source
-4
-0.4
-2
-200mA
-100mA
0
-2
-4
-6
-8
-10
-0.2
0
V
0
V
GS-
Gate Source Voltage
(Volts)
V
DS
- Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
Saturation Characteristics
-Gate Source Voltage (Volts)
60
2
1
0
-2
-4
-6
-8
-10
-12
-14
-16
0
0.5
1.0
1.5
50
Note:V
GS=
0V
f=1MHz
C
iss
C
oss
C
rss
Note:I
D=-
0.2A
C-Capacitance (pF)
40
30
V
DS
=
-20V-40V -60V
20
10
0
-10
-20
-30
-40
-50
-60
-70
V
DS
-Drain Source Voltage (Volts)
V
0
5
/
Q-Gate Charge (nC)
Capacitance v drain-source voltage
RDS(on)-Drain Source On Resistance
Ω
Gate charge v gate-source voltage
100
2.6
V
GS
=-5V
-6V
and V
-7V
-10V
-15V
-20V
V
GS=
-10V
I
D=
0.37A
2.0
10
Normalised R
1.0
V
GS=
V
DS
I
D=
-1mA
1
-10
-100
-1000
0.6
-40 -20
0
20
40
60
80 100 120 140 160 180
I
D-
Drain Current (mA)
Junction Temperature (°C)
On-resistance vs Drain Current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3 - 435
嵌入式系统
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