TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),SO
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 包装说明 | , |
| Reach Compliance Code | compliant |
| 配置 | Single |
| 最大漏极电流 (Abs) (ID) | 11 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 2 W |
| 表面贴装 | YES |
| Base Number Matches | 1 |
| UPA2782GR-E2-AT | UPA2782GR | UPA2782GR-E1 | UPA2782GR-E1-A | UPA2782GR-E1-AT | UPA2782GR-A | |
|---|---|---|---|---|---|---|
| 描述 | TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),SO | 11A, 30V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8 | UPA2782GR-E1 | Nch Single Power MOSFET 30V 11A 15mohm Power SOP8 | Nch Single Power MOSFET 30V 11A 15mohm Power SOP8 | 11A, 30V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8 |
| Reach Compliance Code | compliant | compliant | unknown | compliant | compliant | compliant |
| 是否Rohs认证 | 符合 | 不符合 | - | 符合 | 符合 | 符合 |
| 配置 | Single | SINGLE WITH BUILT-IN DIODE | - | Single | Single | SINGLE WITH BUILT-IN DIODE |
| 最大漏极电流 (Abs) (ID) | 11 A | 11 A | - | 11 A | 11 A | 11 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C | 150 °C | 150 °C |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 2 W | 2 W | - | 2 W | 2 W | 2 W |
| 表面贴装 | YES | YES | - | YES | YES | YES |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
| 是否无铅 | - | 含铅 | - | 不含铅 | 不含铅 | 不含铅 |
| 零件包装代码 | - | SOT | - | SOP | SOP | SOT |
| 针数 | - | 8 | - | 8 | 8 | 8 |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | 260 |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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