MXTA42
NPN Plastic-Encapsulate Transistor
* “G” Lead(Pb)-Free
1
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
2
3
M aximum R atings
( T
A
=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
300
300
5.0
500
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature Range
Symbol
PD
R
θ
JA
TJ,Tstg
Max
500
4.0
250
-55 to +150
Unit
mW
mW/ C
C/W
C
Device Marking
MXTA42=A42
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
Collector Cutoff Current (VCB= 200 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc, IC =0)
1.FR-5=1.0 x 0.75 x 0.062 in.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
300
300
5.0
-
-
Max
-
-
-
0.25
0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WE ITR O N
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MXTA42
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC= 1 mAdc, VCE=10 Vdc)
(IC= 10 mAdc, VCE=10 Vdc)
(IC=30 mAdc, VCE=10 Vdc)
Collector-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2 mAdc)
Base-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2 mAdc)
Transition Frequency
(VCE =20 Vdc, IC =10 mAdc, f=30MHz)
hFE
(1)
hFE
(2)
hFE
(3)
VCE(sat)
VBE(sat)
fT
60
80
75
-
-
50
-
250
-
0.2
0.9
-
-
Vdc
Vdc
MHz
Classification of hFE
(2)
Rank
Range
A
80-100
B1
100-150
B2
150-200
C
200-250
WEITRON
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MXTA42
Typical Characteristics
120
hFE, DC CURRENT GAIN
WE IT R ON
100
80
60
40
Tj=+125 C
25 C
-55 C
20
0
0.1
1.0
I C , COLLECTOR CURRENT (mA)
10
100
FIG. 1 DC Current Gain
1.4
1.2
V, VOLTAGE (VOLTS)
V
CE(sat)
@25 C, I
C
I
B
= 10
V
CE(sat)
@125 C, I
C
I
B
=10
V
CE(sat)
@ -55 C, I
C
I
B
=10
V
BE(sat)
@25 C, I
C
I
B
= 10
V
BE(sat)
@125 C, I
C
I
B
=10
V
BE(sat)
@ -55 C, I
C
I
B
=10
V
BE(on)
@25 C,
V
CE
= 10V
V
BE(on)
@125 C,
V
CE
= 10V
V
BE(on)
@-55 C,
V
CE
= 10V
0.1
1.0
10
100
1.0
0.8
0.6
0.4
0.2
00
IC, COLLECTOR CURRENT (mA)
FIG.2 "On"Voltages
80
f T , CURRENT-GAIN-BANDWIDTH (MHz)
70
60
50
40
30
20
10
1.0
Tj=25 C
V
EC
=20V
f=20MHz
2.0
3.0
5.0 7.0
10
20
30
50
70 100
IC
,
COLLECTOR CURRENT (mA)
FIG.3 Current-Gain-Bandwidth
WEITRON
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MXTA42
SOT-89 Outline Dimensions
WE IT R ON
unit:mm
SOT-89
E
G
A
J
C
H
K
L
B
D
Dim
A
B
C
D
E
G
H
J
K
L
Min
Max
1.600
1.400
0.520
0.320
0.560
0.360
0.440
0.350
4.600
4.400
1.800
1.400
2.600
2.300
4.250
3.940
1.500TYP
3.100
2.900
WEITRON
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