MUN5211 Series
NPN Silicon Bias Resistor Transistor
* “G” Lead(Pb)-Free
R1
R2
3
1
2
SOT-323(SC-70)
Maximum Ratings
( T
A
=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature Range
Symbol
PD
R JA
TJ,Tstg
Max
202
1.6
618
-55 to +150
Unit
mW
mW/ C
C/W
C
1.FR-4 @ minimum pad
2.FR-4 @ 1.0
l
1.0 inch Pad
l
Device Marking and Resistor Values
Device
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
Marking
8A
8B
8C
8D
8E
8F
8G
R1(K)
10
22
47
10
10
4.7
1.0
R2(K)
10
22
47
47
8 8
Device
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
Marking
8H
8J
8K
8L
8M
8N
8P
R1(K)
2.2
4.7
4.7
2.2
2.2
100
47
R2(K)
2.2
4.7
47
47
47
100
22
1.0
WE ITR O N
http://www.weitron.com.tw
MUN5211 Series
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
WE IT R ON
Symbol
Min
Typ
Max
Unit
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC=2.0mA, IB =0)
Collector-Base Breakdown Voltage
(IC=10 uA ,IE=0)
Collector-Base Cutoff Voltage
(V
CB
=50 V, I E =0)
Collector-Emitter Cutoff Current
(ICE=50V, IB =0)
Emitter-Base Cutoff Current
(VEB=6.0V, IC =0)
V(BR)CEO
V(BR)CBO
ICBO
ICEO
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
IEBO
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
V
V
nA
nA
mA
WEITRON
http://www.weitron.com.tw
MUN5211 Series
Electrical Characteristics
On Characteristics
(3)
DC Current Gain
(VCE=10V, IC =5.0mA)
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
h FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
-
(T
A
=25 C Unless Otherwise noted)
WE IT R ON
Symbol
Min
Typ
Max
Unit
Characteristics
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
Vdc
Collector-Emitter Saturation Voltage
(IC =10mA, I B =0.3mA)
(IC =10mA, I B =5mA)
MUN5230/MUN5231
(IC =10mA, I B =1mA)
MUN5215/MUN5216
MUN5232/MUN5233/MUN5234
Output Voltage(on)
(VCC=5.0V, VB =2.5V, R L =1.0k
)
MUN5211
MUN5212
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5213
MUN5236
MUN5237
VCE(sat)
VOL
(VCC=5.0V, VB =3.5V, RL =1.0k )
(VCC=5.0V, VB =5.5V, RL =1.0k )
(VCC=5.0V, VB =4.0V, RL =1.0k )
Output Voltage(off )
(VCC=5.0V, VB =0.5V, RL =1.0k )
(VCC=5.0V, VB =0.050V, R L =1.0k ) MUN5230
(VCC=5.0V, VB =0.25V, RL =1.0k ) MUN5215/MUN5216/MUN5233
3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
-
Vdc
VOH
Vdc
WEITRON
http://www.weitron.com.tw
MUN5211 Series
Electrical Characteristics
On Characteristics
Input Resistor
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
(T
A
=25 C Unless Otherwise noted)
WE IT R ON
Symbol
Min
Typ
Max
Unit
Characteristics
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
k
Resistor Ratio MUN5211/MUN5212
MUN5213/MUN5236
MUN5214
MUN5215/MUN5216
MUN5230/MUN5231/MUN5232
MUN5233
MUN5234
MUN5235
MUN5237
R1/R2
MUN5211
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
350
P
D
, P OWE R DIS S IPAT ION (mW)
300
250
200
150
100
50
0
- 50
R
θJ
A
= 403 C /W
0
50
100
T
A
, AMB IE NT T E MP E R AT UR E ( C )
150
1
I
C
/I
B
= 10
T
A
= -25 C
25 C
0.1
75 C
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
FIG 1. Derating Curve
FIG.2 V
CE(sat)
versus I
C
http://www.weitron.com.tw
WEITRON
MUN5211 Series
hFE , DC CURRENT GAIN (NORMALIZED)
1000
V
CE
= 10 V
C ob , CAPACITANCE (pF)
T
A
= 75 C
25 C
-25 C
100
3
4
WE IT R ON
f = 1 M Hz
I
E
= 0 V
T
A
= 25 C
2
1
10
1
10
I
C
, COLLECTOR CURRENT (m A)
100
0
0
10
20
30
40
V
R
, REVERSE BIAS VOL TAGE (VOLTS)
50
FIG.3 DC Current Gain
100
75 C
IC, COLLECTOR CURRENT (mA)
10
25 C
T
A
= -25 C
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
FIG.4 Output Capacitance
T
A
= -25 C
25 C
75 C
1
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0.001
0.1
0
10
40
20
30
I
C
, COLLECTOR CURRENT (mA)
50
FIG.5 Output Current versus Input Voltage
MUN5212
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1
I
C
/I
B
= 10
25 C
0.1
T
A
= -25 C
75 C
1000
FIG.6 Input Voltage versus Output Current
V
CE
= 10 V
T
A
= 75 C
25 C
-25 C
100
0.01
0.001
0
20
I
C
, COLLECTOR CURRENT (m A)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (m A)
100
FGI.7 VCE(sat) versus I C
FIG.8 DC Current Gain
http://www.weitron.com.tw
WEITRON
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
