Ordering number : ENA1896A
SFT1443
SANYO Semiconductors
DATA SHEET
SFT1443
Features
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
•
•
ON-resistance RDS(on)1=180m
Ω
(typ.)
Halogen free compliance
Input Capacitance Ciss=490pF(typ.)
Protection diode in
•
4V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
9
36
1
19
150
-
-55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7518-004
6.5
5.0
1.5
2.3
0.5
Package Dimensions
unit : mm (typ)
7003-004
SFT1443-H
6.5
5.0
2.3
1.5
0.5
SFT1443-TL-H
4
4
7.0
5.5
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 t o 0.2
1.2
0.6
2.5
0.85
0.7
5.5
7.0
0.85
0.5
1.2
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
2,4
Marking
(TP, TP-FA)
Packing Type (TP-FA) : TL
T1443
LOT No.
TL
Electrical Connection
1
3
http://semicon.sanyo.com/en/network
60612 TKIM/D1510PA TKIM TC-00002450 No.A1896-1/9
SFT1443
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=9A, VGS=0V
VDS=50V, VGS=10V, ID=9A
See specified Test Circuit.
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
ID=3A, VGS=10V
ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4V
Ratings
min
100
1
±10
1.5
4
180
195
205
490
34
19
8
10
34
24
9.8
1.8
1.6
1.03
1.2
225
275
290
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD=50V
10V
0V
VIN
PW=10μs
D.C.≤1%
G
D
ID=4.5A
RL=11.1Ω
VOUT
P.G
SFT1443
50Ω
S
Ordering Information
Device
SFT1443-H
SFT1443-TL-H
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free and Halogen Free
No. A1896-2/9
SFT1443
9
8
7
ID -- VDS
Tc=-25
°
C
10
.
0V
8.0
V
10
ID -- VGS
VDS=10V
V
4.5
6.0
V
4.0V
9
8
Drain Current, ID -- A
V
Drain Current, ID -- A
6
5
4
3
2
16
7
6
5
4
.0
3.5V
0
VGS=2.5V
0
0.5
1.0
1.5
2.0
2.5
3.0
IT16177
0
0
0.5
1.0
1.5
2.0
2.5
3.0
25
°
3.5
1
1
Tc=
7
3.0V
2
C
--25
°
C
4.0
3
5
°
C
4.5
Drain-to-Source Voltage, VDS -- V
450
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
450
RDS(on) -- Tc
IT16178
Tc=25
°
C
ID=1.5A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
350
400
350
300
250
200
150
100
50
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
3.0A
300
250
200
150
100
50
0
0
2
4
6
8
10
12
14
16
A
3.0
I D=
,
.0V
=10
V GS
=4
GS
V
.0
=1
, ID
V
.5A
=
S
VG
.5A
=1
, ID
.5V
4
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
3
5
|
y
fs
|
-- ID
IT16179
10
7
5
3
2
Case Temperature, Tc --
°
C
IT16180
IS -- VSD
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS=10V
VGS=0V
25
°
C
0.01
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
IT16182
Drain Current, ID -- A
100
7
10
IT16181
1000
7
5
7
0.001
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
VDD=50V
VGS=10V
Ciss, Coss, Crss -- pF
Tc=7
5
°
C
25
°
C
--25
°
C
5
°
C
Tc= --2
75
°
C
Source Current, IS -- A
1.0
7
5
3
2
0.1
7
5
3
2
f=1MHz
3
2
tf
10
7
5
3
2
1.0
0.1
td(on)
tr
100
7
5
3
2
10
Coss
Crss
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5 7 100
IT16183
0
5
10
15
20
25
30
IT16184
Drain-to-Source Voltage, VDS -- V
No.A1896-3/9
SFT1443
10
9
VGS -- Qg
VDS=50V
ID=9A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=36A (PW≤10μs)
ID=9A
DC
o
10
μ
10
ms
per
atio
n
s
10
0
1m
s
μ
s
Operation in
this area is
limited by RDS(on).
10
0m
s
0.01
0.1
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
IT16185
25
Drain-to-Source Voltage, VDS -- V
PD -- Tc
5 7 100
IT16186
Allowable Power Dissipation, PD -- W
1.0
Allowable Power Dissipation, PD -- W
0
20
40
60
80
100
120
140
160
20
19
0.8
15
0.6
10
0.4
0.2
5
0
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT16187
Case Temperature, Tc --
°C
IT16188
No. A1896-4/9
SFT1443
Taping Specification
SFT1443-TL-H
No.A1896-5/9
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