A45/SMA45
1000 TO 4000 MHz
CASCADABLE AMPLIFIER
· HIGH GAIN: 17.5 dB (TYP.)
· LOW NOISE: 4.5 dB (TYP.)
· HIGH OUTPUT POWER: +19.5 dBm (TYP.)
· GaAs FET DESIGN
Specifications (Rev. Date: 1/01)*
Characteristics
Frequency
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @ 15 Volts (max.)
Typical
0° to 50°C
°
°
Typical Performance @ 25°C
Guaranteed
-54° to +85°C
°
°
1.0-4.0 GHz
17.5 dB
±0.6 dB
36 dB
4.0 dB
19.5 dBm
+29 dBm
+39 dBm
+44 dBm
1.8:1 / 1.7:1
120 mA
1.0-4.0 GHz
16.5 dB
±0.8 dB
5.0 dB
18.0 dBm
1.0-4.0 GHz
15.5 dB
±1.0 dB
5.5 dB
17.0 dBm
2.1:1 / 2.1:1
125 mA
2.2:1 / 2.2:1
130 mA
* Measured in a 50-ohm system at +15 Vdc Nominal. Subject to change without notice.
Absolute Maximum Ratings
Storage Temperature
Max. Case Temperature
Max. DC Voltage
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3
µsec
max.)
“S” Series Burn-in Temperature (Case)
-65° to +125°C
85°C
+16 Volts
+13 dBm
100 mW
0.25 W
85°C
Thermal Data: V
cc
= 15 Vdc
Thermal Resistance
θ
jc
Transistor Power Dissipation P
d
Junction Temperature Rise Above Case T
jc
131°C/W
0.497 W
65°C
Outline Drawings
Package
Figure
Model
TO-8
BG
A45
Surface Mount
AA
SMA45
SMA Connectorized
CE
CA45
Specifications subject to change without notice.
•
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