^Ssmi-Conductoi iPioaucki, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SVMTCHMODE SERIES
NPN
SILICON POWER TRANSISTORS
... designed for use in high-voltage, high-speed, power switching
in inductive circuit, where fall time and RBSOA are critical. They are
particularly well-suited for line-operated switchmode applications such
as switching regulator's,inverters,Motor Controls.and Deflection circuits
FEATURES:
•Collector-Emitter Sustaining Voltage-
BV
CBO
=450V
* Collector-Emitter Saturation Voltage -
=
2
= 3
-°
A
- ''B
=
°-
4A/
°-
3A
* Switching Time - t^ =0.4 us (Max.) @ l
c
=3.0 A
* SOAand Switching Application Information.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX:
(973) 376-8960
NPN
MJH16002
MJH16004
5 AMPERE
POWER
TRANASISTORS
450 VOLTS
100 WATTS
I
MAXIMUM
RATINGS
I
TO-247{3P)
Collector Current - Continuous
-Peak:
Jase current
lotal Power Dissipation @T
r
=25°C I
Derate above 25° C
'
I
Operating and Storage Junction
>"iperature Range
HERMAL CHARACTERISTICS
Characteristic
fhermal Resistance Junction to Case
1
Symbol
R6JC
'c
<CM
5
10
A
°L-
D
- ^-1
C
A
t
'.
P
D
T , ,T
STS
A
100
800
-65 to +150
r
11M
TL> F
^tr-
1
f
V»Jjtf| I
W
mW/°C
°C
H—
iWi-f
J-
IP
L
-
_[3
pJ
MINI
20.63
15.38
1.90
5.10
—N
Max
Unit
°C/W
PIN 1.BASE
2.COLLECTOR
3.EMTTTER
1.25
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
MILLIMETERS
MAX)
FIGURE -1 POWER DERATING
100
| 80
\
22.38
16.20
2.70
6.10
25
50
75
100
125
150
14.81
11.72
4.20
1.82
2.92
0.89
5.26
15.22
12.84
4.50
2.46
3.23
1.53
5.66
§ eo
1 40
tt
I
x
T
c
. TEMPERATURECC)
18.50
4.68
2.40
3.25
0.56
21.50
5.36
2.80
3.85
0.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Ounlitv
MJH16002, MJH16004 NPN
ELECTRICAL CHARACTERISTICS ( T
c
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(l
c
=100mA.I
B
=0)
Collector Cutoff Current
( V
CEV
* Rated Value, V
BE(om
=1.5 V )
( V
CEV
= Rated Value, V.^-1.5 V , T
c
=100 °C)
Emitter Cutoff Current
(V
EB
=6.0V, l
c
-0)
ON CHARACTERISTICS (1)
DC Current Gain
(U*5.0A,V
CE
=5.0V)
Collects-Emitter Saturation Voltage
(l
c
=1.5A,l
B
=200mA)
(l
c
=1.5A,l
B
=150mA)
(l
c
=3.0A,L*400mA)
(lc=3.0A,l
B
=300mA)
Base-Emitter Saturation Voltage
(l
c
=3.0A,l
B
=400mA)
(l
c
=3.0A.I
B
=300mA)
DYNAMIC CHARACTERISTICS
Output Capacitance
( V
CB
~
10 V , I
E
= 0, f = 1.0 kHz )
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test Pulse Width =300 us,Duty Cycle S 2.0%
V
CC
= 250V, I
C
= 3.0A
2I
B1
=-I
B2
=0.8A
tp = 30 us.Duty Cycle S2.0%
Cob
V
CEO(«n)
= 25°C unless othervvise noted )
Symbol
Min
Max
Unit
V
450
'CEV
mA
0.25
1.5
mA
1.0
IEBO
MJH16002
MJH16004
MJH16002
WIJH16004
MJH16002
MJH16004
MJH16002
MJH16004
hFE
5.0
7.0
Vcs™
V
1.0
1.0
2.5
2.5
V
V
BE<«t)
1.5
1.5
200
PF
*d
t
r
t.
tf
0.1
0.4
3.0
0.4
us
us
us
us
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