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MBRB30H50CT-HE3/81

产品描述DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
产品类别分立半导体    二极管   
文件大小149KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
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MBRB30H50CT-HE3/81概述

DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

MBRB30H50CT-HE3/81规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码D2PAK
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-3
针数3
Reach Compliance Codeunknown
Base Number Matches1

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New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
2
MBR30HxxCT
PIN 1
PIN 3
PIN 2
CASE
3
1
MBRF30HxxCT
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC-Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
1
MBRB30HxxCT
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
2 x 15 A
35 V to 60 V
150 A
0.56 V, 0.59 V
80 µA, 60 µA
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified
current (Fig. 1)
total device
per diode
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
1.0
25
35
35
35
45
45
45
30
15
80
150
0.5
20
50
50
50
60
60
60
UNIT
V
V
V
A
mJ
A
A
mJ
Non-repetitive avalanche energy per diode
at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode
at t
p
= 2.0 µs, 1 kHz
Peak non-repetitive reverse energy
(8/20 µs waveform)
Document Number: 88866
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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