SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

Surface Mount T

RANS

Z

ORB

®

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

DO-214AA (SMB J-Bend)

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

• Solder dip 260 °C, 40 seconds

PRIMARY CHARACTERISTICS

V

WM

P

PPM

I

FSM

(uni-directional only)

T

J

max.

5.0 V to 188 V

600 W

100 A

150 °C

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

MECHANICAL DATA

Case:

DO-214AA (SMBJ)

Epoxy meets UL 94V-0 flammability rating

Terminals:

Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity:

For uni-directional types the band denotes

cathode end, no marking on bi-directional types

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use C or CA suffix

(e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation with a 10/1000 µs waveform

(1)(2)

(Fig. 1)

Peak pulse current with a 10/1000 µs waveform

(1)

(2)

SYMBOL

P

PPM

I

PPM

I

FSM

T

J

, T

STG

VALUE

600

See next table

100

- 55 to + 150

UNIT

W

A

°C

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Operating junction and storage temperature range

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T

A

= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88392

Revision: 04-Sep-07

www.vishay.com

93

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

DEVICE TYPE

MODIFIED

“J” BEND LEAD

(+)

DEVICE MARKING

CODE

UNI

BI

KD

KE

KF

KG

AH

AK

KL

KM

AN

AP

AQ

AR

AS

AT

AU

AV

AW

AX

KY

KZ

BD

BE

LF

LG

BH

BK

BL

BM

LN

LM

LQ

LR

BS

BT

LU

LV

BW

BX

BY

BZ

CD

CE

MF

MG

CH

CK

CL

CM

CN

CP

CQ

CR

BREAKDOWN

VOLTAGE

V

BR

AT I

T (1)

(V)

MIN

6.40

6.67

7.22

7.78

8.33

8.89

9.44

10.0

11.1

12.2

13.3

14.4

15.6

16.7

17.8

18.9

20.0

22.2

24.4

26.7

28.9

31.1

33.3

36.7

40.0

44.4

MAX

7.82

7.07

8.15

7.37

8.82

7.98

9.51

8.60

10.2

9.21

10.9

9.83

11.5

10.4

12.2

11.1

13.6

12.3

14.9

13.5

16.3

14.7

17.6

15.9

19.1

17.2

20.4

18.5

21.8

19.7

23.1

20.9

24.4

22.1

27.1

24.5

29.8

26.9

32.6

29.5

35.3

31.9

38.0

34.4

40.7

36.8

44.9

40.6

48.9

44.2

54.3

49.1

TEST

CURRENT

I

T

(mA)

10

1.0

STAND-OFF

VOLTAGE

V

WM

(V)

5.0

6.0

6.5

7.0

7.5

8.0

8.5

9.0

10

11

12

13

14

15

16

17

18

20

22

24

26

28

30

33

36

40

MAXIMUM

REVERSE

LEAKAGE

AT V

WM

I

D

(µA)

(3)

800

500

200

100

50

20

10

5.0

1.0

MAXIMUM

PEAK PULSE

SURGE

CURRENT

I

PPM

(A)

(2)

62.5

65.2

52.6

58.3

48.8

53.6

45.1

50.0

42.0

46.5

40.0

44.1

37.7

41.7

35.5

39.0

31.9

35.3

29.9

33.0

27.3

30.2

25.2

27.9

23.3

25.9

22.3

24.6

20.8

23.1

19.7

21.7

18.6

20.5

16.8

18.5

15.2

16.9

14.0

15.4

12.9

14.3

12.0

13.2

11.2

12.4

10.2

11.3

9.3

10.3

8.4

9.3

MAXIMUM

CLAMPING

VOLTAGE AT

I

PPM

V

C

(V)

9.6

9.2

11.4

10.3

12.3

11.2

13.3

12.0

14.3

12.9

15.0

13.6

15.9

14.4

16.9

15.4

18.8

17.0

20.1

18.2

22.0

19.9

23.8

21.5

25.8

23.2

26.9

24.4

28.8

26.0

30.5

27.6

32.2

29.2

35.8

32.4

39.4

35.5

43.0

38.9

46.6

42.1

50.0

45.4

53.5

48.4

59.0

53.3

64.3

58.1

71.4

64.5

SMBJ5.0

(+)

SMBJ5.0A

(5)

SMBJ6.0

SMBJ6.0A

(+)

SMBJ6.5

(+)

SMBJ6.5A

(+)

SMBJ7.0

(+)

SMBJ7.0A

(+)

SMBJ7.5

(+)

SMBJ7.5A

(+)

SMBJ8.0

(+)

SMBJ8.0A

(+)

SMBJ8.5

(+)

SMBJ8.5A

(+)

SMBJ9.0

(+)

SMBJ9.0A

(+)

SMBJ10

(+)

SMBJ10A

(+)

SMBJ11

(+)

SMBJ11A

(+)

SMBJ12

(+)

SMBJ12A

(+)

SMBJ13

(+)

SMBJ13A

(+)

SMBJ14

(+)

SMBJ14A

(+)

SMBJ15

(+)

SMBJ15A

(+)

SMBJ16

(+)

SMBJ16A

(+)

SMBJ17

(+)

SMBJ17A

(+)

SMBJ18

(+)

SMBJ18A

(+)

SMBJ20

(+)

SMBJ20A

(+)

SMBJ22

(+)

SMBJ22A

(+)

SMBJ24

(+)

SMBJ24A

(+)

SMBJ26

(+)

SMBJ26A

(+)

SMBJ28

(+)

SMBJ28A

(+)

SMBJ30

(+)

SMBJ30A

(+)

SMBJ33

(+)

SMBJ33A

(+)

SMBJ36

(+)

SMBJ36A

(+)

SMBJ40

(+)

SMBJ40A

www.vishay.com

94

KD

KE

KF

KG

KH

KK

KL

KM

KN

KP

KQ

KR

KS

KT

KU

KV

KW

KX

KY

KZ

LD

LE

LF

LG

LH

LK

LL

LM

LN

LP

LQ

LR

LS

LT

LU

LV

LW

LX

LY

LZ

MD

ME

MF

MG

MH

MK

ML

MM

MN

MP

MQ

MR

Document Number: 88392

Revision: 04-Sep-07

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

DEVICE TYPE

MODIFIED

“J” BEND LEAD

(+)

DEVICE MARKING

CODE

UNI

BI

CS

CT

MU

MV

MW

MX

MY

MZ

ND

NE

NF

NG

NH

NK

NL

NM

NN

NP

NQ

NR

NS

NT

NU

NV

NW

NX

NY

NZ

PD

PE

PF

PG

PH

PK

PL

PM

PN

PP

PQ

PR

PT

PS

BREAKDOWN

VOLTAGE

V

BR

AT I

T (1)

(V)

MIN

47.8

50.0

53.3

56.7

60.0

64.4

66.7

71.1

77.8

83.3

86.7

94.4

100

111

122

133

144

167

178

189

209

MAX

58.4

52.8

61.1

55.3

65.1

58.9

69.3

62.7

73.3

66.3

78.7

71.2

81.5

73.7

86.9

78.6

95.1

86.0

102

92.1

106

95.8

115

104

122

111

136

123

149

135

163

147

176

159

204

185

218

197

231

209

255

231

TEST

CURRENT

I

T

(mA)

1.0

STAND-OFF

VOLTAGE

V

WM

(V)

43

45

48

51

54

58

60

64

70

75

78

85

90

100

110

120

130

150

160

170

188

MAXIMUM

REVERSE

LEAKAGE

AT V

WM

I

D

(µA)

(3)

1.0

MAXIMUM

PEAK PULSE

SURGE

CURRENT

I

PPM

(A)

(2)

7.8

8.6

7.5

8.3

7.0

7.8

6.6

7.3

6.2

6.9

5.8

6.4

5.6

6.2

5.3

5.8

4.8

5.3

4.5

5.0

4.3

4.8

4.0

4.4

3.8

4.1

3.4

3.7

3.1

3.4

2.8

3.1

2.6

2.9

2.2

2.5

2.1

2.3

2.0

2.2

1.7

2.0

MAXIMUM

CLAMPING

VOLTAGE AT

I

PPM

V

C

(V)

76.7

69.4

80.3

72.7

85.5

77.4

91.1

82.4

96.3

87.1

103

93.6

107

96.8

114

103

125

113

134

121

139

126

151

137

160

146

179

162

196

177

214

193

231

209

268

243

287

259

304

275

344

328

SMBJ43

SMBJ45

SMBJ48

(+)

SMBJ43A

(+)

SMBJ45A

(+)

SMBJ48A

(+)

SMBJ51

(+)

SMBJ51A

SMBJ54

(+)

SMBJ54A

(+)

SMBJ58

(+)

SMBJ58A

(+)

SMBJ60

(+)

SMBJ60A

(+)

SMBJ64

(+)

SMBJ64A

(+)

SMBJ70

(+)

SMBJ70A

(+)

SMBJ75

(+)

SMBJ75A

(+)

SMBJ78

(+)

SMBJ78A

(+)

SMBJ85

(+)

SMBJ85A

(+)

SMBJ90

(+)

SMBJ90A

(+)

SMBJ100

(+)

SMBJ100A

(+)

SMBJ110

(+)

SMBJ110A

(+)

SMBJ120

(+)

SMBJ120A

(+)

SMBJ130

(+)

SMBJ130A

(+)

SMBJ150

(+)

SMBJ150A

(+)

SMBJ160

(+)

SMBJ160A

(+)

SMBJ170

(+)

SMBJ170A

SMBJ188

SMBJ188A

Notes:

MS

MT

MU

MV

MW

MX

MY

MZ

ND

NE

NF

NG

NH

NK

NL

NM

NN

NP

NQ

NR

NS

NT

NU

NV

NW

NX

NY

NZ

PD

PE

PF

PG

PH

PK

PL

PM

PN

PP

PQ

PR

PT

PS

(1) Pulse test: tp

≤

50 ms

(2) Surge current waveform per Fig. 3 and derate per Fig. 2

(3) For bi-directional types having V

WM

of 10 V and less, the I

D

limit is doubled

(4) All terms and symbols are consistent with ANSI/IEEE C62.35

(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum V

BR

is 7.25 V

(6) V

F

= 3.5 V at I

F

= 50 A (uni-directional only)

(+)

Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number

E136766 for both uni-directional and bi-directional devices

www.vishay.com

95

Document Number: 88392

Revision: 04-Sep-07

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

THERMAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Typical thermal resistance, junction to ambient

Typical thermal resistance, junction to lead

Note:

(1) Mounted on minimum recommended pad layout

(1)

SYMBOL

R

θJA

R

θJL

VALUE

100

20

UNIT

°C/W

ORDERING INFORMATION

(Example)

PREFERRED P/N

SMBJ5.0A-E3/52

SMBJ5.0A-E3/5B

SMBJ5.0AHE3/52

(1)

SMBJ5.0AHE3/5B

(1)

UNIT WEIGHT (g)

0.096

PREFERRED PACKAGE CODE

52

5B

52

5B

BASE QUANTITY

750

3200

750

3200

DELIVERY MODE

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

Note:

(1) Automotive grade AEC Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(T

A

= 25

°C

unless otherwise noted)

100

150

I

PPM

- Peak Pulse Current,

%

I

RSM

P

PPM

- Peak Pulse Power (kW)

t

r

= 10

µs

Peak

Value

I

PPM

10

T

J

= 25 °C

Pulse

Width

(t

d

)

is defined as the Point

where

the Peak Current

decays to 50

%

of I

PPM

100

Half

Value

- I

PP

I

PPM

2

50

10/1000

µs Waveform

as defined

by

R.E.A.

t

d

0

1.0

2.0

3.0

4.0

1

0.2 x 0.2" (5.0 x 5.0 mm)

Copper Pad Areas

0.1

µs

1.0

µs

10

µs

100

µs

1.0 ms

10 ms

t

d

- Pulse

Width

(s)

t - Time (ms)

Figure 1. Peak Pulse Power Rating Curve

Figure 3. Pulse Waveform

Peak Pulse Power (P

PP

) or Current (I

PP

)

Derating in Percentage,

%

100

6000

75

C

J

- Junction Capacitance (pF)

Measured at

Zero Bias

1000

50

100

V

R

, Measured at Stand-Off

Voltage V

WM

Uni-Directional

Bi-Directional

T

J

= 25 °C

f = 1.0 MHz

V

sig

= 50 mVp-p

100

200

25

0

25

50

75

100

125

150

175

200

10

1

10

T

J

- Initial Temperature (°C)

V

WM

- Reverse Stand-Off

Voltage

(V)

Figure 2. Pulse Power or Current vs. Initial Junction Temperature

Figure 4. Typical Junction Capacitance

www.vishay.com

96

Document Number: 88392

Revision: 04-Sep-07

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

100

200

Transient Thermal Impedance (°C/W)

Peak Forward Surge Current (A)

8.3

ms Single Half Sine-Wave

Uni-Directional Only

100

10

1.0

0.1

0.001

0.01

0.1

1.0

10

100

1000

10

1

10

100

t

p

- Pulse Duration (s)

Number

of Cycles at 60 Hz

Figure 5. Typical Transient Thermal Impedance

Figure 6. Maximum Non-Repetitive Peak Forward Surge Current

PACKAGE OUTLINE DIMENSIONS

in inches (millimeters)

DO-214AA (SMB-J-Bend)

Cathode Band

0.085 (2.159)

MAX.

Mounting Pad Layout

0.086 (2.20)

0.077 (1.95)

0.155 (3.94)

0.130 (3.30)

0.086 (2.18)

MIN.

0.180 (4.57)

0.160 (4.06)

0.012 (0.305)

0.006 (0.152)

0.096 (2.44)

0.084 (2.13)

0.060 (1.52)

MIN.

0.220 REF.

0.060 (1.52)

0.030 (0.76)

0.220 (5.59)

0.205 (5.21)

0.008 (0.2)

0 (0)

Document Number: 88392

Revision: 04-Sep-07

www.vishay.com

97

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
零件包装代码	DO-214AA
包装说明	R-PDSO-C2
针数	2
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
最大击穿电压	7.82 V
最小击穿电压	6.4 V
配置	SINGLE
二极管元件材料	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码	DO-214AA
JESD-30 代码	R-PDSO-C2
JESD-609代码	e3
湿度敏感等级	1
最大非重复峰值反向功率耗散	600 W
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性	BIDIRECTIONAL
认证状态	Not Qualified
最大重复峰值反向电压	5 V
表面贴装	YES
技术	AVALANCHE
端子面层	MATTE TIN
端子形式	C BEND
端子位置	DUAL
处于峰值回流温度下的最长时间	40
Base Number Matches	1

	SMBJ5.OCA-HE3	SMBJ5.OCA	SMBJ5.OCA-E3
描述	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor
是否无铅	不含铅	含铅	不含铅
是否Rohs认证	符合	不符合	符合
零件包装代码	DO-214AA	DO-214AA	DO-214AA
包装说明	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
针数	2	2	2
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
最大击穿电压	7.82 V	7.82 V	7.82 V
最小击穿电压	6.4 V	6.4 V	6.4 V
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码	DO-214AA	DO-214AA	DO-214AA
JESD-30 代码	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
JESD-609代码	e3	e0	e3
最大非重复峰值反向功率耗散	600 W	600 W	600 W
元件数量	1	1	1
端子数量	2	2	2
最高工作温度	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	NOT SPECIFIED	260
极性	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL
认证状态	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	5 V	5 V	5 V
表面贴装	YES	YES	YES
技术	AVALANCHE	AVALANCHE	AVALANCHE
端子面层	MATTE TIN	TIN LEAD	MATTE TIN
端子形式	C BEND	C BEND	C BEND
端子位置	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	40	NOT SPECIFIED	40
Base Number Matches	1	1	1
湿度敏感等级	1	-	1

SMBJ5.OCA-HE3

SMBJ5.OCA-HE3概述

SMBJ5.OCA-HE3规格参数

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