Dual PNP Epitaxial Planar Transistor
FMBT3906DW1
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2,3
Switching time equivalent test circuits................................................ 4
Rating and characteristic curves........................................................ 4, 5, 6
Pinning information........................................................................... 7
Marking........................................................................................... 7
Suggested solder pad layout............................................................. 7
Packing information.......................................................................... 8
Reel packing.................................................................................... 9
Suggested thermal profiles for soldering processes............................. 9
High reliability test capabilities.......................................................... 10
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 1
DS-231113
Dual PNP Epitaxial Planar Transistor
FMBT3906DW1
200mA Silicon PNP Epitaxial Planar
Transistor
Features
•
High collector-emitterbreakdien voltage.
•
•
•
•
•
(BV
CEO
= -40V@I
C
=-1.0mA)
Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
Offer PNP+ PNP in one package
recommended
Capable of 150mW power dissipation.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.FMBT3906DW1-H
Formosa MS
Package outline
SOT-363
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
.087(2.20)
.079(2.00)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.026(0.65)Typ. .010(0.25)
.003(0.08)
.004(0.10)
Max.
.043(1.10)
.035(0.90)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-363
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
.016(0.40)
.012(0.30)
Dimensions in inches and (millimeters)
•
Polarity : See Diagram
•
Mounting Position : Any
•
Weight : Approximated 0.006 gram
3
Q
4
2
1
Q
5
6
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation FR-5 board T
A
= 25
O
C
(1)
Thermal resistance
Operating temperature
Storage temperature
1.FR-5 = 1.0 X 0.75 X0.062 in.
Junction to ambient
CONDITIONS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
T
J
T
STG
MIN.
TYP.
MAX. UNIT
-40
-40
-5.0
-200
150
833
O
V
V
V
mA
mW
C/W
o
-55
-65
+150
+150
C
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 2
DS-231113
Dual PNP Epitaxial Planar Transistor
FMBT3906DW1
Characteristics
(AT T =25 C unless otherwise noted)
o
A
Formosa MS
CONDITIONS
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
BL
I
CEX
MIN.
-40
-40
-5.0
-50
-50
TYP.
MAX. UNIT
V
V
V
nA
Off characteristics
PARAMETER
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
I
c
= -10uA, I
E
= 0
I
c
= -1mA, I
B
= 0
I
c
= -10uA, I
C
= 0
V
CE
= -30Vdc, V
EB
= -3.0Vdc
V
CE
= -30Vdc, V
EB
= -3.0Vdc
On characteristics(3)
PARAMETER
CONDITIONS
I
c
= -0.1mA, V
CE
= -1.0V
I
c
= -1.0mA, V
CE
= -1.0V
DC current gain
I
c
= -10mA, V
CE
= -1.0V
I
c
= -50mA, V
CE
= -1.0V
I
c
= -100mA, V
CE
= -1.0V
Collector-Emitter saturation voltage(3)
I
c
= -10mA, I
B
= -1.0mA
I
c
= -50mA, I
B
= -5.0mA
Base-Emitter saturation voltage(3)
I
c
= -10mA, I
B
= -1.0mA
I
c
= -50mA, I
B
= -5.0mA
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
Small-signal characteristics
PARAMETER
CONDITIONS
Symbol
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
2.0
0.1
100
3.0
MIN.
250
4.5
1.0
12
10.0
400
60
4.0
TYP.
MAX. UNIT
MHz
pF
Vdc
pF
Vdc
kohms
X 10
-4
-
umhos
dB
V
BE(sat)
-0.65
V
CE(sat)
h
FE
Symbol
MIN.
60
80
100
60
30
-0.25
-0.40
-0.85
-0.95
Vdc
Vdc
300
-
TYP.
MAX. UNIT
Current-gain-bandwidth product(4) I
C
= -10mA, V
CE
= -20V, f = 100MHz
Output capacitance
Input capacitance
Input impedance
Voltage feeback radio
Small-signal current gain
Output admittance
Noise figure
V
CB
= -5.0V, I
E
= 0, f = 1.0MHz
V
EB
= -0.5V, I
C
= 0, f = 1.0MHz
V
CE
= -10A, I
C
= -1.0mA, f = 1.0KHz
V
CE
= -10V, I
C
= -1.0mA, f = 1.0KHz
V
CE
= -10V, I
C
= -1.0mA, f = 1.0KHz
V
CE
= -10V, I
C
= -1.0mA, f = 1.0KHz
V
CE
= -5.0V, I
C
= -100uA, RS = 1.0K ohms, f = 1.0KHZ
4.f
T
is defined as the frequency at which h
fe
extrapolates to unity.
Switching characteristics
PARAMETER
Delay time
Rise time
Storage time
Fall time
V
CC
= -3.0V, I
C
=-10mA, I
B1
= I
B2
= -1.0mA
V
CC
= -3.0V, V
BE
= 0.5V, I
C
= -10mA, I
B1
= -1.0mA
CONDITIONS
Symbol
td
tr
ts
tf
MIN.
TYP.
MAX. UNIT
35
35
225
75
ns
5. Pulse Test: Pulse Width <=300µs, Duty cycle«=2.0%
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 3
DS-231113
Rating and characteristic curves (FMBT3906DW1)
3V
+9.1V
275
<1ns
+0.5V
10k
0
CS
<4
pF
10.6V
300 ns
DUTY CYCLE=2%
10<t 1
<500
s
DUTY CYCLE=2%
t1
10.9V
1N916
10k
<1ns
3V
275
CS<4 pF
*Total
shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure
.
Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T J
=25
C
10
7.0
5000
3000
2000
T J
=125
C
CAPACITANCE
(pF)
VCC
=40V
I C
/I
B
=10
Q CHARGE
(pC)
5.0
Cobo
Cibo
1000
700
500
300
200
100
3.0
2.0
Q
T
Q
A
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
70
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSEM BIAS
(VOLTS)
I C COLLECTOR CURRENT
(mA)
Figure 3. Capacitance
Figure 4. Charge Data
500
300
200
I C
/I
B
=10
500
300
200
VCC
=40V
I B 1=I B 2
I C
/I
B
=20
t f FALL TIME
(ns)
100
100
70
50
30
20
10
7
5
TIME
(ns)
70
50
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
t r
@V
CC
=3.0V
15V
40V
2.0V
t d
@V
OB
=0V
20 30
50 70 100
200
I C
/I
B
=10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I C COLLECTOP CURRENT
(mA)
I C COLLECTYOR CURRENT
(mA)
Figure 5. Turn-On Time
Figure 6.Fall Time
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 4
DS-231113
Rating and characteristic curves (FMBT3906DW1)
(V
CE
= -5.0
Vdc, T A
=
25
°C,
Bandwidth= 1.0Hz)
5.0
12
SOURCE RESISTANCE=200
1/2
I C
=1.0
mA
NF NOISE FIGURE
(dB)
SOURCE RESISTANCE=200
1/2
I C
=0.5
mA
3.0
f=1.0 kHz
I C
=1.0mA
I C
=0.5mA
NF NOISE FIGURE
(dB)
4.0
10
8
SOURCE RESISTANCE=2.0 k
I C
=50
uA
6
I C
=100uA
2.0
4
I C
=50
uA
1.0
SOURCE RESISTANCE=2.0 k
I C
=100
uA
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
2
0
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
f FREQUENCY
(kHZ)
Rg SOURCE RESISTANCE
(k
OHMS)
Figure 7.
Figure 8.
h PARAMETERS
300
(V
CE
= -10
Vdc, f= 1.0 kHz, T A
=
25
°C)
100
mhos)
hfe DC CURRENT GAIN
200
70
50
hoe OUTPUT ADMITTANCE
(
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0 1.0
30
20
100
70
50
10
7
5
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
1.0
30
I C COLLECTOR CURRENT
(mA)
Figure 9. Current Gain
Figure 10. Input Impedance
I C COLLECTOR CURRENT(mA)
hfe VOLTAGE FEEBACK RATIO
(X
10
x4
)
20
10
7.0
5.0
hfe INPUT IMPEDANCE
(k
OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
I C COLLECTOR CURRENT
(MA)
I C COLLECTOR CURRENT
(mA)
Figure
.11
Input Impedance
Figure 12. Votage Feeback Ratio
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
10
Page 5
DS-231113
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