Dual NPN Transistor
Formosa MS
FMBT3904DW1 & FMBT3904DW2
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2,3
Switching time equivalent test circuits................................................ 4
Rating and characteristic curves........................................................ 5, 6, 7
Pinning information........................................................................... 8
Marking........................................................................................... 8
Suggested solder pad layout............................................................. 8
Packing information.......................................................................... 9
Reel packing.................................................................................... 10
Suggested thermal profiles for soldering processes............................. 10
High reliability test capabilities.......................................................... 11
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
11
Page 1
DS-231123
Dual NPN Transistor
Formosa MS
FMBT3904DW1 & FMBT3904DW2
Dual General Purpose Transistor
NPN+NPN Silicon
Features
.087(2.20)
.079(2.00)
Package outline
SOT-363
•
High collector-emitterbreakdien voltage.
•
•
•
•
•
(BV
CEO
= 40V@I
C
=1mA)
S mall load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
Offer NPN+NPN in one package
Capable of 150mW power dissipation.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.FMBT3904DW1-H.
.053(1.35)
.045(1.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.026(0.65)Typ. .010(0.25)
.003(0.08)
.004(0.10)
Max.
.043(1.10)
.035(0.90)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-363
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
.016(0.40)
.012(0.30)
Dimensions in inches and (millimeters)
•
Polarity : See Diagram
•
Mounting Position : Any
•
Weight : Approximated 0.006 gram
3
Q
4
2
1
3
Q
4
2
1
Q
Q
5
6
FMBT3904DW1
5
6
FMBT3904DW2
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation
Thermal resistance
Operating temperature
Storage temperature
T
A
= 25 C
Junction to ambient
O
CONDITIONS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
T
J
T
STG
MIN.
TYP.
MAX. UNIT
60
40
6.0
200
150
833
O
V
V
V
mA
mW
C/W
o
-55
-65
+150
+150
C
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
11
Page 2
DS-231123
Dual NPN Transistor
Formosa MS
FMBT3904DW1 & FMBT3904DW2
Characteristics
(AT T =25 C unless otherwise noted)
o
A
Off characteristics
PARAMETER
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
I
c
= 10uA, I
E
= 0
I
c
= 1mA, I
B
= 0
I
c
= 10uA, I
C
= 0
V
CE
= 30Vdc, V
EB
= 3.0Vdc
V
CE
= 30Vdc, V
EB
= 3.0Vdc
CONDITIONS
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
BL
I
CEX
MIN.
60
40
6.0
50
50
TYP.
MAX. UNIT
V
V
V
nA
On characteristics(3)
PARAMETER
CONDITIONS
I
c
= 0.1mA, V
CE
= 1.0V
I
c
= 1.0mA, V
CE
= 1.0V
DC current gain
I
c
= 10mA, V
CE
= 1.0V
I
c
= 50mA, V
CE
= 1.0V
I
c
= 100mA, V
CE
= 1.0V
Collector-Emitter saturation voltage(3)
I
c
= 10mA, I
B
= 1.0mA
I
c
= 50mA, I
B
= 5.0mA
Base-Emitter saturation voltage(3)
I
c
= 10mA, I
B
= 1.0mA
I
c
= 50mA, I
B
= 5.0mA
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
Small-signal characteristics
PARAMETER
CONDITIONS
Symbol
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
1.0
0.5
100
1.0
MIN.
300
4.0
8.0
10
8.0
400
40
5.0
TYP.
MAX. UNIT
MHz
pF
pF
kohms
X 10
-4
-
umhos
dB
V
BE(sat)
0.65
V
CE(sat)
h
FE
Symbol
MIN.
40
70
100
60
30
0.2
0.3
0.85
0.95
Vdc
Vdc
300
-
TYP.
MAX. UNIT
Current-gain-bandwidth product(4) I
C
= 10mA, V
CE
= 20V, f = 1.0MHz
Output capacitance
Input capacitance
Input impedance
Voltage feeback radio
Small-signal current gain
Output admittance
Noise figure
V
CB
= 5.0V, I
E
= 0, f = 1.0MHz
V
EB
= 0.5V, I
C
= 0, f = 1.0MHz
V
CE
= 10mA, I
C
= 1.0mA, f = 1.0KHz
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
V
CE
= 5.0V, I
C
= 100uA, RS = 1.0K ohms, f = 1.0KHZ
4.f
T
is defined as the frequency at which h
fe
extrapolates to unity.
Switching characteristics
PARAMETER
Delay time
Rise time
Storage time
Fall time
V
CC
= 3.0V, I
C
=10mA, I
B1
= I
B2
= 1.0mA
V
CC
= 3.0V, V
BE
= -0.5V, I
C
= 10mA, I
B1
= 1.0mA
CONDITIONS
Symbol
td
tr
ts
tf
MIN.
TYP.
MAX. UNIT
35
35
200
50
ns
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
11
Page 3
DS-231123
Dual NPN Transistor
Formosa MS
FMBT3904DW1 & FMBT3904DW2
Switching time equivalent test circuits
DUTY CYCLE=2%
300 ns
+10.9V
10k
-0.5V
<1ns
+3V
275
10<t1<500 us
DUTY CYCLE=2%
0
CS<4 pF
-9.1V
t1
+3V
+10.9V
275
10k
1N916
<1ns
CS<4 pF
*Total
shunt capacitance of test jig and connectors
Figure 1
.
Delay and Rise Time
Equivalent Test Circuit
Figure 2
.
Storage and Fall Time
Equivalent Test Circuit
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
11
Page 4
DS-231123
Dual NPN Transistor
Formosa MS
5000
3000
VCC=40V
I C / I B =10
Rating and characteristic curves (FMBT3904DW1 & FMBT3904DW2)
TYPICAL TRANSIENT CHARACTERISTIC
T
J
=25°C, -------- T
J
=125°C
10
7.0
CAPACITANCE
(
pF
)
5.0
Q CHARGE
(
pC
)
2000
1000
700
500
300
200
100
70
Cibo
3.0
QT
2.0
Cobo
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE
(
VOLTS
)
IC COLLECTOR CURRENT (mA)
Figure 3
.
Capacitance
Figure 4
.
Charge Data
500
500
300
200
100
70
50
30
20
10
7
5
I C / I B =10
300
200
VCC =40V
I C / I B =10
tf RISE TIME (ns)
200
TIME
(
ns
)
100
70
50
30
20
10
7
5
1.0
t r @VCC=3.0V
40V
15V
t d @VOB=0V
1.0
2.0 3.0
5.0 7.0 10
20
30
2.0V
50 70 100
2.0
3.0
5.0 7.0 10
20
30
50 70 100
200
IC COLLECTOR CURRENT
IC COLLECTOR CURRENT (mA)
Figure 5
.
Turn
-
On Time
Figure 6
.
Rise Time
500
300
,
I
s
STORAGE TIME (ns)
200
100
70
50
30
20
10
7
5
1.0
I C / I B =20
I C / I B =10
,
t s =t s-1/8t f
I B1 =I B2
500
300
200
VCC=40V
I B1 =I B2
I C / I B =20
100
70
50
30
20
10
7
5
I C / I B =10
I C / I B =20
I C / I B =10
2.0
3.0
5.0 7.0 10
20
30
50 70 100
200
tf FALL TIME (ns)
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
200
IC COLLECTOR CURRENT
(
mA
)
Figure 7
.
Storage Time
IC COLLECTOR CURRENT (mA)
Figure 8
.
Fall Time
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
11
Page 5
DS-231123
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
