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MX69LW1641BXBI-90: 产品描述Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66; 产品类别存储存储; 文件大小512KB，共53页; 制造商Macronix; 官网地址http://www.macronix.com/en-us/Pages/default.aspx

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MX69LW1641BXBI-90概述

Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66

MX69LW1641BXBI-90规格参数

参数名称	属性值
零件包装代码	BGA
包装说明	LFBGA, BGA66,8X12,32
针数	66
Reach Compliance Code	unknown
最长访问时间	90 ns
其他特性	SRAM IS ORGANISED AS 256K X 16
JESD-30 代码	R-PBGA-B66
JESD-609代码	e0
长度	11 mm
内存密度	16777216 bit
内存集成电路类型	MEMORY CIRCUIT
内存宽度	16
混合内存类型	FLASH+SRAM
功能数量	1
端子数量	66
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	1MX16
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装等效代码	BGA66,8X12,32
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
电源	3/3.3 V
认证状态	Not Qualified
座面最大高度	1.4 mm
最大压摆率	0.07 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	TIN LEAD
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
宽度	8 mm
Base Number Matches	1

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ADVANCED INFORMATION

MX69LW1621/1641T/B

16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM

MIXED MULTI CHIP PACKAGE MEMORY

FEATURES

• Supply voltage range: 2.7V to 3.6V

• Fast access time: Flash memory:70/90ns

SRAM memory:70/85ns

• Operation temperature range: -40 ~ 85°

• 100,000 minimum erase/program cycles

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Status Register feature for detection of program or

erase cycle completion

• Read While Write Operation between Bank I, Bank II

• Software command control

• Selective Block Lock

FLASH

Word mode only

15mA maximum active current

0.1uA typical standby current

Program Time: 4ms typical /each blocks

Auto program for Bank I (2Mb)

- Word Programming (1 word)

- Page Programming (128 word)

• Auto program for Bank II (14Mb)

- Page programming (128 word)

• Auto erase operation

- Automatically erases any combination of the blocks

- Fast erase time: 40ms typical for single block erase

•

SRAM

•

MX69LW1621T/B: 128K wordx16 Bit

MX69LW1641T/B: 256K wordx16 Bit

70mA maximum active current

1uA typical standby current

Data retention supply voltage: 2.0V~3.6V

Byte data control : LBs(Q0 to Q7) and UBs(Q8 to Q15)

GENERAL DESCRIPTION

The MXIC's mixed multi chip memory combines Flash

and SRAM into a single package. The mixed multi chip

memory operates 2.7 to 3.6V power supply to allow for

simple in-system operation.

The Flash memory of mixed multi chip memory manu-

factured with MXIC's advanced nonvolatile memory tech-

nology, the flash memory of mixed multi chip memory

provide simultaneous operation which can read data while

program/erase, the data is divided into two banks of

Bank I and BankII. The device offers access times of

70ns/90ns, and a low 0.1uA typical standby current.

The 2M-bit SRAM of MX69LW1621T/B is organized as

128K-word by 16-bit. The 4M-bit SRAM of

MX69LW1641T/B is organized as 256K-word by 16-bit.

The advanced CMOS technology and circuit techniques

provide both high speed and low power features of with

a typical CMOS standby current of 1uA and maximum

access time of 70ns/85ns in 3V operation.

The mixed multi chip memory is available in 11mm x

8mm FBGA Package to suit a variety of design applica-

tions.

P/N:PM0925

REV. 0.1, MAY 02, 2003

MX69LW1641BXBI-90相似产品对比

	MX69LW1641BXBI-90	MX69LW1621BXBI-70	MX69LW1641TXBI-90	MX69LW1641TXBI-70	MX69LW1641BXBI-70	MX69LW1621TXBI-70	MX69LW1621TXBI-90	MX69LW1621BXBI-90
描述	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32
针数	66	66	66	66	66	66	66	66
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
最长访问时间	90 ns	70 ns	90 ns	70 ns	70 ns	70 ns	90 ns	90 ns
其他特性	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 128K X 16	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 128K X 16	SRAM IS ORGANISED AS 128K X 16	SRAM IS ORGANISED AS 128K X 16
JESD-30 代码	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66
长度	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
内存宽度	16	16	16	16	16	16	16	16
混合内存类型	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM
功能数量	1	1	1	1	1	1	1	1
端子数量	66	66	66	66	66	66	66	66
字数	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
封装等效代码	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
电源	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
最大压摆率	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm
Base Number Matches	1	1	1	1	1	1	1	-

MX69LW1641BXBI-90

MX69LW1641BXBI-90概述

MX69LW1641BXBI-90规格参数

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