JANS 2N3498 thru JANS 2N3501
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
DESCRIPTION
This family of JANS 2N3498 through JANS 2N3501 epitaxial, planar transistors are military
qualified in five RHA (Radiation Hardness Assurance) levels for high-reliability applications.
These devices are also available in TO-5 and low profile surface mount UB packaging.
Microsemi also offers numerous other radiation hardened transistor products to meet higher
and lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
compliant
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL and
JANSR
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N3498 through 2N3501 series numbers.
RHA level JAN qualifications per MIL-PRF-19500/366 (see
part nomenclature
for all options).
RoHS compliant by design.
TO-39
(TO-205AD)
Package
Also available in:
TO-5 package
APPLICATIONS / BENEFITS
•
•
•
•
General purpose transistors for medium power applications requiring high frequency switching and
radiation hardness.
Leaded TO-39 package.
Lightweight.
Military and other high-reliability, rad-hard applications.
(long-leaded)
JANS 2N3498L – 2N3501L
UB package
(surface mount)
JANS 2N3501UB
MAXIMUM RATINGS
@ T
C
= +25 ºC unless otherwise noted
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
C
= +25 °C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
R
ӨJA
R
ӨJC
P
T
T
J
, T
stg
2N3498
2N3499
100
100
6.0
500
175
30
1.0
5.0
2N3500
2N3501
150
150
6.0
300
Unit
V
V
V
mA
o
o
C/W
C/W
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
Notes:
1. See
figure 1.
2. See
figure 2.
-65 to +200
T4-LDS-0056, Rev. 3 (121220)
©2012 Microsemi Corporation
Page 1 of 8
JANS 2N3498 thru JANS 2N3501
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Leads are gold plated.
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 1.064 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JANSM
Reliability Level
JANSM = 3K Rads (Si)
JANSD = 10K Rads (Si)
JANSP = 30K Rads (Si)
JANSL = 50K Rads (Si)
JANSR = 100K Rads (Si)
2N3498
JEDEC type number
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance
Collector cutoff current, base open
Collector cutoff current, circuit between base and emitter
Emitter cutoff current, collector open
Common-emitter static forward current transfer ratio
Collector-emitter voltage, base open
Collector-emitter voltage, emitter open
Emitter-base voltage, collector open
T4-LDS-0056, Rev. 3 (121220)
©2012 Microsemi Corporation
Page 2 of 8
JANS 2N3498 thru JANS 2N3501
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
Collector-Base Cutoff Current
VCB = 50 V
VCB = 75 V
VCB = 100 V
VCB = 150 V
Emitter-Base Cutoff Current
VEB = 4.0 V
VEB = 6.0 V
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 300 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mA, VCE = 20 V, f = 100 MHz
Output Capacitance
VCB = 10 V, IE = 0,
100 kHz < f < 1.0 MHz
2N3498, 2N3499
2N3500, 2N3501
|h
fe
|
1.5
8.0
Symbol
Min.
Max.
Unit
2N3498, 2N3499
2N3500, 2N3501
2N3498,
2N3500,
2N3498,
2N3500,
2N3499
2N3501
2N3499
2N3501
V(BR)CEO
ICBO
100
150
50
50
10
10
25
10
V
nA
nA
µA
µA
nA
µA
IEBO
2N3498,
2N3499,
2N3498,
2N3499,
2N3498,
2N3499,
2N3498,
2N3499,
2N3500
2N3501
2N3500
2N3501
2N3500
2N3501
2N3500
2N3501
2N3500
2N3501
2N3498
2N3499
hFE
20
35
25
50
35
75
40
100
15
20
15
20
120
300
All Types
2N3498, 2N3499
2N3500, 2N3501
All Types
2N3498, 2N3499
2N3500, 2N3501
VCE(sat)
0.2
0.6
0.4
0.8
1.4
1.2
V
VBE(sat)
V
Cobo
10
8.0
80
pF
Input Capacitance
VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz
(1) Pulse Test: pulse width = 300
µs,
duty cycle < 2.0%.
Cibo
pF
T4-LDS-0056, Rev. 3 (121220)
©2012 Microsemi Corporation
Page 3 of 8
JANS 2N3498 thru JANS 2N3501
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VEB = 5 V; IC = 150 mA; IB1 = 15 mA
Turn-Off Time
IC = 150 mA; IB1 = IB2 = -15 mA
Symbol
ton
toff
Min.
Max.
115
1150
Unit
ns
ns
SAFE OPERATING AREA (See SOA figure and reference
MIL-STD-750 method 3053)
DC Tests
TC = +25 ºC, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 V, IC = 500 mA
2N3498, 2N3499
VCE = 16.67 V, IC = 300 mA
2N3500, 2N3501
Test 2
VCE = 50 V, IC = 100 mA
All Types
Test 3
VCE = 80 V, IC = 40 mA
All Types
Clamped Switching
TA = +25 ºC
Test 1
IB = 85 mA, IC = 500 mA
2N3498, 2N3499
IB = 50 mA, IC = 300 mA
2N3500, 2N3501
Collector Current I
C
(Milliamperes)
Collector to Emitter Voltage V
CE
(Volts)
Maximum Safe Operating Area
T4-LDS-0056, Rev. 3 (121220)
©2012 Microsemi Corporation
Page 4 of 8
JANS 2N3498 thru JANS 2N3501
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Collector-Base Cutoff Current
V
CB
= 100 V
V
CB
= 150 V
V
CB
= 50 V
V
CB
= 75 V
Collector to Emitter Cutoff
V
CE
= 80 V
V
CE
= 120 V
Emitter-Base Cutoff Current
V
EB
= 4.0 V
V
EB
= 6.0 V
Forward-Current Transfer Ratio
I
C
= 0.1 mA, V
CE
= 10 V
Symbol
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
V
(BR)CEO
Min.
100
150
20
20
100
100
2
Max.
Unit
V
I
CBO
µA
µA
nA
nA
µA
I
CEO
I
EBO
50
20
[10]
[17.5]
[12.5]
[25]
[17.5]
[37.5]
[20]
[50]
[7.5]
[10]
[7.5]
[10]
0.23
0.69
0.46
0.92
1.61
1.38
120
300
nA
µA
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3500
2N3501
2N3498
2N3499
All Types
2N3498, 3N3499
2N3500, 2N3501
All Types
2N3498, 3N3499
2N3500, 2N3501
[h
FE
]
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 300 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 300 mA, I
B
= 30 mA
I
C
= 150 mA, I
B
= 15 mA
Base-Emitter Saturation Voltage
I
B
= 10 mA, I
B
= 1.0 mA
I
B
= 300 mA, I
B
= 30 mA
I
B
= 150 mA, I
B
= 15 mA
V
CE(sat)
V
V
BE(sat)
V
T4-LDS-0056, Rev. 3 (121220)
©2012 Microsemi Corporation
Page 5 of 8
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