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UPD44164082AF5-E50Y-EQ2

产品描述IC,SYNC SRAM,DDR,2MX8,CMOS,BGA,165PIN,PLASTIC
产品类别存储    存储   
文件大小374KB,共40页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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UPD44164082AF5-E50Y-EQ2概述

IC,SYNC SRAM,DDR,2MX8,CMOS,BGA,165PIN,PLASTIC

UPD44164082AF5-E50Y-EQ2规格参数

参数名称属性值
是否Rohs认证不符合
Reach Compliance Codeunknown
最长访问时间0.45 ns
最大时钟频率 (fCLK)200 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B165
内存密度16777216 bit
内存集成电路类型STANDARD SRAM
内存宽度8
端子数量165
字数2097152 words
字数代码2000000
工作模式SYNCHRONOUS
组织2MX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
电源1.5/1.8,1.8 V
认证状态Not Qualified
最小待机电流1.7 V
表面贴装YES
技术CMOS
端子形式BALL
端子节距1 mm
端子位置BOTTOM
Base Number Matches1

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DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD44164082A, 44164092A, 44164182A, 44164362A
18M-BIT DDRII SRAM
2-WORD BURST OPERATION
Description
The
μ
PD44164082A is a 2,097,152-word by 8-bit, the
μ
PD44164092A is a 2,097,152-word by 9-bit, the
μ
PD44164182A
is a 1,048,576-word by 18-bit and the
μ
PD44164362A is a 524,288-word by 36-bit synchronous double data rate static
RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44164082A,
μ
PD44164092A,
μ
PD44164182A and
μ
PD44164362A integrate unique synchronous peripheral
circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive
edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high
density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA package (13 x 15)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Pipelined double data rate operation
Common data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.
User programmable impedance output
<R>
Fast clock cycle time : 3.3 ns (300 MHz), 3.7 ns (270 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
<R>
Operating ambient temperature: Commercial T
A
= 0 to +70°C
Industrial
T
A
= –40 to +85°C
(-E33, -E37, -E40, -E50)
(-E37Y, -E40Y, -E50Y)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M17767EJ3V0DS00 (3rd edition)
Date Published February 2007 NS CP(N)
Printed in Japan
The mark <R> shows major revised points.
2006
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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