CYT5401D
SURFACE MOUNT
DUAL, ISOLATED
HIGH VOLTAGE
PNP SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5401D type
consists of two (2) isolated PNP high voltage silicon
transistors packaged in an epoxy molded SOT-228
surface mount case. Manufactured by the epitaxial
planar process, this SUPERmini™ device is ideal for
high voltage applications.
MARKING: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
W
°C
°C/W
250
220
7.0
600
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=120V
50
ICBO
VCB=120V, TA=100°C
50
IEBO
VEB=3.0V
50
BVCBO
IC=100μA
250
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
hfe
NF
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=150mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
220
7.0
100
150
1.0
1.0
100
100
75
25
100
40
300
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
300
6.0
200
8.0
MHz
pF
dB
R1 (23-February 2010)
CYT5401D
SURFACE MOUNT
DUAL, ISOLATED
HIGH VOLTAGE
PNP SILICON TRANSISTORS
SOT-228 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Collector Q1
2) Collector Q1
3) Collector Q2
4) Collector Q2
5)
6)
7)
8)
Emitter Q2
Base Q2
Emitter Q1
Base Q1
MARKING: FULL PART NUMBER
R1 (23-February 2010)
w w w. c e n t r a l s e m i . c o m