MITSUBISHI IGBT MODULES
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
CM10AD05-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
CM10AD05-24H
¡I
C .....................................................................
10A
¡V
CES .........................................................
1200V
¡Insulated
Type
¡3φ
Inverter + 3φ Converter + Brake
+ Thermistor
APPLICATION
AC & DC motor controls, General purpose inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
100
90
±0.25
7.5
8
8
OPEN
OPEN
P1
N1
OPEN
8
8
8
2.54 2.54 2.54
7.62 7.62
8
Dimensions in mm
0.8
2-φ4.5
±0.25
MOUNTING HOLES
12
EVP
GVP EWP
GWP
1
(1)
GUP
EUP
P
13
5
t=0.6
MAIN CIRCUIT TERMINAL
φ2.5
18
φ6
53
±0.5
5 5
56
φ2.5
18
φ6
R
S
7.5 8
13
4 10
PPS
PPS
0.6
t=0.6
T
B
TH1
U
V
TH2
W GB
E
GUN
GVN
GWN
2-R5
P1
P
CONTROL CIRCUIT TERMINAL
8
8
8
8
2.54
8
8
8
2.54
2.54
2.54
2.54
R
S
T
GUP
B
GB
GUN
EUP
GVP
EVP
GVN
GWP
EWP
GWN
90
±0.3
LABEL
N1 TH1 TH2
U
CIRCUIT DIAGRAM
V
W
E
Aug. 1999
MITSUBISHI IGBT MODULES
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
CM10AD05-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
MAXIMUM RATINGS
(Tj = 25°C)
INVERTER PART
Symbol
Parameter
G-E Short
C-E Short
T
C
= 25°C
PULSE
T
C
= 25°C
PULSE
T
C
= 25°C
Conditions
Rating
1200
±20
10
20
10
20
62
Unit
V
V
A
A
W
Collector-emitter voltage
V
CES
V
GES
Gate-emitter voltage
I
C
Collector Current
I
CM
I
E (Note.1)
Emitter Current
I
EM (Note.1)
P
C (Note.3)
Maximum collector dissipation
(Note. 2)
(Note. 2)
BRAKE PART
Symbol
V
CES
V
GES
I
C
I
CM
P
C (Note.3)
V
RRM
I
FM (Note.3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
T
C
= 25°C
PULSE
T
C
= 25°C
Clamp diode part
Clamp diode part
Conditions
Rating
1200
±20
10
20
62
1200
10
Unit
V
V
A
W
V
A
(Note. 2)
CONVERTER PART
Symbol
V
RRM
E
a
I
O
I
FSM
I
2
t
Parameter
Conditions
Rating
1600
440
10
100
42
Unit
V
V
A
A
A
2
s
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
3φ rectifying circuit
Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive
I
2
t for fusing
Value for one cycle of surge current
COMMON RATING
Symbol
T
j
T
stg
V
iso
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Rating
–40 ~ +150
–40 ~ +125
2500
1.47 ~ 1.96
120
Unit
°C
°C
V
N·m
g
AC 1 min.
Mounting M4 screw
Typical value
Aug. 1999
MITSUBISHI IGBT MODULES
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
CM10AD05-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
INVERTER PART
Symbol
I
CES
V
GE(th)
I
GES
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate-emitter cutoff current
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 1.0mA, V
CE
= 10V
Min.
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.7
2.45
—
—
—
50
—
—
—
—
—
—
0.08
—
—
Max.
1
7.5
0.5
3.4
—
2.0
1.5
0.4
—
100
200
150
350
3.5
250
—
2.0
3.1
Unit
mA
V
µA
V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
Collector-emitter saturation voltage
I
C
= 10A, V
GE
= 15V
V
CE(sat)
T
j
= 150°C
Input capacitance
C
ies
V
CE
= 10V
Output capacitance
C
oes
V
GE
= 0V
C
res
Reverse transfer capacitance
Q
G
V
CC
= 600V, I
C
= 10A, V
GE
= 15V
Total gate charge
t
d (on)
Turn-on delay time
V
CC
= 600V, I
C
= 10A
t
r
Turn-on rise time
V
GE1
= V
GE2
= 15V
t
d (off)
R
G
= 31Ω
Turn-off delay time
t
f
Turn-off fall time
Resistive load
V
EC(Note.1)
Emitter-collector voltage
I
E
= 10A, V
GE
= 0V
t
rr (Note.1)
Reverse recovery time
I
E
= 10A, V
GE
= 0V
Q
rr (Note.1)
Reverse recovery charge
die / dt = – 20A /
µs
R
th(j-c)Q
IGBT part, Per 1/6 module
Thermal resistance
R
th(j-c)R
FWDi part, Per 1/6 module
(Note.4)
nF
nC
ns
V
ns
µC
°C/W
BRAKE PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
V
FM
R
th(j-c)Q
R
th(j-c)R
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate-emitter cutoff current
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 1.0mA, V
CE
= 10V
Min.
—
4.5
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.7
2.45
—
—
—
50
—
—
—
Max.
1
7.5
0.5
3.4
—
2.0
1.5
0.4
—
1.7
2.0
3.1
Unit
mA
V
µA
V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
Collector-emitter saturation voltage
I
C
= 10A, V
GE
= 15V
T
j
= 150°C
Input capacitance
V
CE
= 10V
Output capacitance
V
GE
= 0V
Reverse transfer capacitance
V
CC
= 600V, I
C
= 10A, V
GE
= 15V
Total gate charge
I
F
= 10A, Clamp diode part
Forward voltage drop
IGBT part
Thermal resistance
Clamp diode part
(Note.4)
nF
nC
V
°C/W
CONVERTER PART
Symbol
I
RRM
V
FM
R
th(j-c)
Parameter
Repetitive reverse current
Forward voltage drop
Thermal resistance
Test conditions
V
R
= V
RRM
, T
j
= 150°C
I
F
= 10A
Per 1/6 module
Min.
—
—
—
Limits
Typ.
—
—
—
Max.
8
1.7
2.4
Unit
mA
V
°C/W
Aug. 1999
MITSUBISHI IGBT MODULES
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
CM10AD05-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
THERMISTOR PART
Symbol
R
TH
B
(
Parameter
Resistance
B Constant
Test conditions
T
C
= 25°C
Resistance at 25°C, 50°C
(Note.5)
Min.
—
—
Limits
Typ.
(100)
(4000)
Max.
—
—
Unit
kΩ
K
) : These parametric limits are tentative.
COMMON RATING
Symbol
R
th(c-f)
Note.1
2
3
4
5
Parameter
Contact thermal resistance
Test conditions
Case to fin, Thermal compound applied
*
1
(1 module)
Min.
—
Limits
Typ.
0.05
Max.
—
Unit
°C/W
I
E
, V
EC
, t
rr
, Q
rr
, di
e
/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
B = (InR
1
-InR
2
)/(1/T
1
-1/T
2
)
R
1
: Resistance at T
1
(K)
R
2
: Resistance at T
2
(K)
*
1 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Aug. 1999
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