Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
| 参数名称 | 属性值 |
| Reach Compliance Code | unknown |
| 最大集电极电流 (IC) | 2 A |
| 集电极-发射极最大电压 | 60 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 45 |
| JEDEC-95代码 | TO-92 |
| JESD-30 代码 | O-PBCY-W3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.625 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| CL266 | CL169 | CL168 | |
|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
| Reach Compliance Code | unknown | unknown | unknown |
| 最大集电极电流 (IC) | 2 A | 3 A | 3 A |
| 集电极-发射极最大电压 | 60 V | 15 V | 15 V |
| 配置 | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 45 | 180 | 180 |
| JEDEC-95代码 | TO-92 | TO-92 | TO-92 |
| JESD-30 代码 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.625 W | 0.625 W | 0.625 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子形式 | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
| 标称过渡频率 (fT) | - | 100 MHz | 120 MHz |
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