SIGC185T170R2CX1SA3,SIGC185T170R2CX1SA3 pdf中文资料,SIGC185T170R2CX1SA3引脚图,SIGC185T170R2CX1SA3电路-Datasheet-电子工程世界

SIGC185T170R2CX1SA3: 产品描述Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, 13.56 X 13.56 MM, DIE-10; 产品类别分立半导体晶体管; 文件大小65KB，共5页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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SIGC185T170R2CX1SA3概述

Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, 13.56 X 13.56 MM, DIE-10

	SIGC185T170R2CX1SA3	SIGC185T170R2CX1SA1
描述	Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, 13.56 X 13.56 MM, DIE-10	Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, 13.56 X 13.56 MM, DIE-10
包装说明	13.56 X 13.56 MM, DIE-10	13.56 X 13.56 MM, DIE-10
Reach Compliance Code	compliant	compliant
最大集电极电流 (IC)	100 A	100 A
集电极-发射极最大电压	1700 V	1700 V
配置	SINGLE	SINGLE
JESD-30 代码	S-XUUC-N10	S-XUUC-N10
元件数量	1	1
端子数量	10	10
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	SQUARE	SQUARE
封装形式	UNCASED CHIP	UNCASED CHIP
极性/信道类型	N-CHANNEL	N-CHANNEL
表面贴装	YES	YES
端子形式	NO LEAD	NO LEAD
端子位置	UPPER	UPPER
晶体管应用	MOTOR CONTROL	MOTOR CONTROL
晶体管元件材料	SILICON	SILICON
标称断开时间 (toff)	830 ns	830 ns
标称接通时间 (ton)	200 ns	200 ns
Base Number Matches	1	1

器件捷径: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY