TSAL7600
Vishay Telefunken
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 ) Package
Description
TSAL7600 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear plastic
packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
¾
Features
D
D
D
D
D
D
D
D
Extra high radiant power and radiant intensity
High reliability
Low forward voltage
Suitable for high pulse current operation
Standard T–1
¾
(ø 5 mm) package
Angle of half intensity
ϕ
=
±
30
°
Peak wavelength
l
p
= 940 nm
Good spectral matching to Si photodetectors
94 8494
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
°
C
°
C
°
C
°
C
K/W
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
t
x
5sec, 2 mm from case
Document Number 81015
Rev. 2, 20-May-99
www.vishay.com
1 (5)
TSAL7600
Vishay Telefunken
10
1
I
e
– Radiant Intensity ( mW/sr )
10
2
14255
1000
I
F
– Forward Current ( A )
I
FSM
= 1 A ( Single Pulse )
t
p
/ T = 0.01
10
0
0.1
0.5
0.05
100
10
1
1.0
10
–1
10
–2
96 11987
0.1
10
–1
10
0
10
1
10
0
t
p
– Pulse Duration ( ms )
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
Figure 3. Pulse Forward Current vs. Pulse Duration
10
4
I
F
– Forward Current ( mA )
Figure 6. Radiant Intensity vs. Forward Current
1000
10
3
F
e
– Radiant Power ( mW )
4
13602
100
10
2
t
p
= 100
m
s
t
p
/ T = 0.001
10
10
1
1
10
0
0
13600
0.1
1
2
3
10
0
V
F
– Forward Voltage ( V )
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
Figure 4. Forward Current vs. Forward Voltage
1.2
V
Frel
– Relative Forward Voltage
1.1
I
e rel
;
F
e rel
I
F
= 10 mA
1.0
0.9
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
I
F
= 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
100
94 7993 e
0
–10 0 10
50
100
140
94 7990 e
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81015
Rev. 2, 20-May-99
www.vishay.com
3 (5)
TSAL7600
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81015
Rev. 2, 20-May-99
www.vishay.com
5 (5)
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