CM1000DUC-34NF
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Mega Power
Dual IGBTMOD™
1000 Amperes/1700 Volts
P
(8 PLACES)
U
A
D
H H
G
N
S
W
L
K
C2E1
C2
C1
X J
F
BB
G2
E2
E1
G1
Y CB
Z
F
E
CC
J
E2
C1
U
V
H H H H H H
G
G
AA
L
R (9 PLACES) M
LABEL
T
C2
C2E1
E2
C1
C1
G2
E2
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heatsinking
£
RoHS Compliant
Applications:
£
High Power DC Power Supply
£
Large DC Motor Drives
£
Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1000DUC-24NF
is a 1700V (V
CES
), 1000 Ampere
Dual IGBTMOD Power
Module.
Type
CM
Current Rating
Amperes
1000
V
CES
Volts (x 50)
34
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
5.91
5.10
1.67±0.01
5.41±0.01
6.54
2.91±0.01
1.65
0.55
1.50±0.01
0.16
Millimeters
150.0
129.5
42.5±0.25
137.5±0.25
166.0
74.0±0.25
42.0
14.0
38.0±0.25
4.0
Dimensions
M
N
P
R
S
T
U
V
W
X
Y
Z
AA
Inches
0.075±0.008
0.47
0.26
M6 Metric
0.08
0.99
0.62
0.71
0.75
0.43
0.83
0.41
0.22
Millimeters
1.9±0.2
12.0
6.5
M6
2.0
25.1
15.7
18.0
19.0
11.0
21.0
10.5
5.5
1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
07/11 Rev. 2
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current DC (T
C
= 104°C)
*2
Peak Collector Current (Pulse, Repetitive)
*3
Total Power Dissipation (T
C
= 25°C)
Emitter Current, FWDi (T
C
= 25°C)
*2,*4
*2,*4
*3
Symbol
T
j
T
stg
*7
CM1000DUC-34NF
-40 to 150
-40 to 125
1700
±20
1000
2000
8925
1000
2000
40
40
1450
-50 to 100
3500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
in-lb (max.)
in-lb (max.)
Grams
µm
Volts
V
CES
V
GES
I
C
I
CRM
P
tot
I
E
*1
*1
Peak Emitter Current, FWDi (Pulse, Repetitive)
Main terminals Mounting Torque, M6 Screw
I
ERM
–
–
–
e
c
Mounting to Heatsink Mounting Torque, M6 Screw
Weight (Typical)
Flatness to Baseplate (On Centerline X, Y1, Y2)
*8
Isolation Voltage (Main Terminal to Baseplate, RMS, f = 60Hz,AC 1 min.)
*1
*2
*3
*4
*7
*8
V
iso
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
Case temperature (T
C
) and heatsink temperature (T
s
) measured point is just under the chips.
Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
Junction temperature (T
j
) should not increase beyond maximum junction temperature (T
j(max)
) rating.
The operation temperature is restrained by the permission temperature of female connector housing.
Baseplate flatness measurement point is as in the following figure.
39 mm
39 mm
– CONCAVE
+ CONVEX
Y1
Y2
X
BOTTOM
BOTTOM
LABEL SIDE
BOTTOM
– CONCAVE
+ CONVEX
2
07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
Electrical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage (Chip)
(Without Lead Resistance)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
*1
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 100mA, V
CE
= 10V
I
C
= 1000A, V
GE
= 15V, T
j
= 25°C
*5
I
C
= 1000A, V
GE
= 15V, T
j
= 125°C
V
CE
= 10V, V
GE
= 0V
V
CC
= 1000V, I
C
= 1000A, V
GE
= 15V
V
CC
= 1000V, I
C
= 1000A,
V
GE1
= V
GE2
= 15V,
R
G
= 0.47Ω, Inductive Load
Switching Operation
I
E
= 1000A, V
GE
= 0V
*5
*5
Min.
–
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
7
2.2
2.45
–
–
–
6000
–
–
–
–
2.3
–
90
272.4
250.2
172.4
0.286
0.67
Max.
1
5
8
2.85
–
220
25
4.7
–
600
200
1000
300
3
500
–
–
–
–
–
–
Units
mA
µA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
Emitter-Collector Voltage (Chip)
(Without Lead resistance)
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy Per Pulse
Turn-off Switching Energy Per Pulse
Reverse Recovery Energy Per Pulse
Internal Lead Resistance
Internal Gate Resistance
t
rr
*1
Q
rr
*1
E
on
E
off
E
rr
*1
V
CC
= 1000V, I
E
= 1000A, V
GE
=
±15V,
R
G
= 0.47Ω, Inductive Load
V
CC
= 1000V, I
C
= I
E
= 1000A,
V
GE
= 15V, R
G
= 0.47Ω,
T
j
= 125°C, Inductive Load
Main Terminals-Chip, Per Switch,
T
j
= 25°C
*2
R
(lead)
r
g
Per Switch
Thermal and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Contact Thermal Resistance,
Case to Heatsink
*2
*2
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT
Per Clamp Diode
Per 1/2 Module
Thermal Grease Applied
*6
Min.
–
–
–
Typ.
–
–
0.012
Max.
0.014
0.023
–
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
*2
Recommended Operating Conditions,
T
a
= 25°C unless otherwise specified
Characteristics
DC Supply Voltage
R
th(j-c)
Q
Gate (-Emitter Drive) Voltage
External Gate Resistance
*1
*2
*5
*6
Symbol
V
CC
V
GE(on)
R
G
Test Conditions
Applied Across C1-E2
Applied Across G1-Es1/G2-Es2
Per Switch
Min.
–
13.5
0.47
Typ.
1000
15.0
–
Max.
1100
16.5
4.7
Units
Volts
Volts
Ω
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
Case temperature (T
C
) and heatsink temperature (T
s
) measured point is just under the chips.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Typical value is measured by using thermally conductive grease of
λ
= 0.9 W/(m•K).
07/11 Rev. 2
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2000
COLLECTOR CURRENT, I
C
, (AMPERES)
15
1600
1200
800
400
0
13
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
V
GE
= 20V
T
j
= 25°C
4
10
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
3
8
6
4
2
0
I
C
= 1000A
I
C
= 400A
I
C
= 2000A
11
2
10
1
9
0
2
4
6
8
10
0
0
400
800
1200
1600
2000
6
8
10
12
14
16
18
20
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
4
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
3
T
j
= 25°C
T
j
= 125°C
V
GE
= 0V
C
ies
SWITCHING TIME, (ns)
10
4
10
2
10
3
t
d(off)
t
d(on)
t
f
10
3
10
1
C
oes
C
res
10
2
t
r
V
CC
= 1000V
V
GE
= ±15V
R
G
= 0.47Ω
T
j
= 125°C
Inductive Load
10
0
10
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
-1
10
-1
10
0
10
1
10
2
10
1
10
2
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V
CC
= 1000V
V
GE
= ±15V
R
G
= 0.47Ω
T
j
= 25°C
Inductive Load
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, VGE
10
4
REVERSE RECOVERY TIME, t
rr
, (ns)
10
4
10
4
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
16
12
8
4
0
I
C
= 1000A
T
j
= 25°C
V
CC
= 800V
V
CC
= 1000V
SWITCHING TIME, (ns)
10
3
t
d(on)
t
d(off)
t
f
10
3
I
rr
10
3
10
2
t
r
V
CC
= 1000V
V
GE
= ±15V
I
C
= 1000A
T
j
= 125°C
Inductive Load
t
rr
10
1
10
-1
10
0
EXTERNAL GATE RESISTANCE, R
G
, (Ω)
10
1
10
2
10
2
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
10
4
0
2000
4000
6000
8000 10000
GATE CHARGE, Q
G
, (nC)
4
07/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
0
10
-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & CLAMP DIODE)
10
-2
10
-1
10
0
10
1
SWITCHING LOSS, E
on
, E
off
, (mJ/PULSE)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10
3
REVERSE RECOVERY ENERGY VS.
FORWARD CURRENT
(TYPICAL)
10
3
SWITCHING LOSS, E
rr
, (mJ/PULSE)
10
-1
Single Pulse
T
C
= 25°C
Per Unit Base
R
th(j-c')
=
0.014°C/W
(IGBT)
R
th(j-c')
=
0.023°C/W
(Clamp)
V
CC
= 1000V
V
GE
= ±15V
T
j
= 125°C
R
G
= 0.47Ω
Inductive Load
10
2
V
CC
= 1000V
V
GE
= ±15V
T
j
= 125°C
R
G
= 0.47Ω
E
on
E
off
Inductive Load
10
2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
1
10
2
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
10
1
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
10
4
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
10
4
SWITCHING LOSS, E
on
, E
off
, (mJ/PULSE)
SWITCHING LOSS, E
rr
, (mJ/PULSE)
10
4
10
3
10
3
V
CC
= 1000V
V
GE
= ±15V
T
j
= 125°C
I
C
= 1000A
Inductive Load
10
2
10
1
10
-1
V
CC
= 1000V
V
GE
= ±15V
T
j
= 125°C
I
C
= 1000A
E
on
E
off
Inductive Load
10
2
10
0
GATE RESISTANCE, R
G
, (Ω)
10
1
10
1
10
-1
10
0
GATE RESISTANCE, R
G
, (Ω)
10
1
07/11 Rev. 2
5
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