N-Channel JFET
General Purpose Amplifier
CORPORATION
J201 – J204 / SST201 – SST204
FEATURES
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -55
o
C to +150
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +135
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
•
High Input Impedance
•
Low I
GSS
PIN CONFIGURATION
SOT-23
G
TO-92
D
S
ORDERING INFORMATION
G
D S
5010
PRODUCT MARKING (SOT-23)
SST201
A01
SST202
A02
SST203
A03
SST204
A04
Part
Package
Temperature Range
J201-204
Plastic TO-92
-55
o
C to +135
o
C
SST201-204 Plastic SOT-23
-55
o
C to +135
o
C
For Sorted Chips in Carriers see 2N4338 series.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
I
GSS
V
GS(off)
BV
GSS
I
DSS
I
G
g
fs
g
os
C
iss
C
rss
e
n
PARAMETER
Gate Reverse Current
(Note 1)
Gate-Source Cutoff
Voltage
Gate-Source Breakdown
Voltage
Saturation Drain Current
(Note 2)
Gate Current (Note 1)
Common-Source Forward
500
Transconductance (Note 2)
Common-Source Output
Conductance
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
Equivalent Short-Circuit
Input Noise Voltage
1
4
1
5
-0.3
-40
0.2
-10
1,000
3.5
4
1
5
1.0
201
202
203
204
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
-100
-1.5 -0.8
-40
0.9
-10
1,500
10
4
1
5
4.5
-100
-4.0
-2.0
-40
4.0
-10
20
-100
-10.0 -0.3
-25
0.2
1.2
-10
500 1,500
µs
2.5
4
pF
1
10
nV
Hz
√
V
DS
= 20V,
V
GS
= 0
f = 1MHz
(Note 3)
V
DS
= 10V, f = 1kHz
V
GS
= 0
(Note 3)
f = 1kHz
3.0
mA
pA
-100
-2.0
V
V
DS
= 0, I
G
= -1µA
V
DS
= 20V, V
GS
= 0
V
DG
= 20V, I
D
= I
DSS(min)
UNITS
pA
TEST CONDITIONS
V
DS
= 0, V
GS
= -20V
VDS = 20V, I
D
= 10nA
NOTES: 1.
Approximately doubles for every 10
o
C increase in T
A
.
2.
Pulse test duration = 2ms.
3.
For design reference only, not 100% tested.
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