FEATURES
Power semiconductor module protection
-
High pulse
and rms current
–
Multiple Leads
Power Semiconductor circuits
–
Resonant circuits
–
Induction Heaters
–
Switching power supplies
PSB: -40°C to +100°C, observing voltage and current derating
RSB: -40°C to +85°C
+10% at 1 kHz, 25°C
+5% optional
WVDC
700
850
1000
1200
1500
2000
2500
3000
VAC
1300
1550
1750
2600
4000
1100
2200
3300
(1200)
(1300)
(1600)
(2400)
(3500)
(RSB)
WVDC
700
850
1000
1200
1500
2000
2500
3000
VAC
420
500
575
630
650
700
725
750
For T>+85°C , The voltage (DC/AC)must be decreased by (1.5/2.5)% per °C
Frequency
C<1uF
C>1uF
(kHz)
1
0.05%
0.06%
Insulation Resistance
30000 MΩxuF
(not to exceed 30GΩ)
<1 nano-Henry per mm of lead spacing
<0.5% after 2 years at 40°C
100000 Hours @WVDC
30000 Hours @ VAC
Capacitance Change
<3% of initially measured value
300/ Billion component hours
56 days at40°C with 90 to 95%RH, +40°C and no voltage applied
Capacitance Change
<2% of initially measured value
Dissipation Factor
<0.001 at 1kHz and 25°C
Insulation Resistance
>50% of maximum specified value
<1 nano-Henry per mm of lead spacing
<0.5% after 2 years at 40°C
-200 ppm/°C, +100ppm/°C
Terminal to case
3kVAC @ 50/60 Hz applied between
160% of rated VDC or 150% VAC
terminals and case for 60 seconds at
applied for 2 Seconds and 25°C
25°C
Polypropylene
Double Metallized film with internal series connections
Flame Retardant plastic box with epoxy resin (UL94V-0)
Lead free tinned copper leads
Terminal to Terminal
APPLICATIONS
Operating Temperature Range
Capacitance Tolerance
Non-Recurrent SVDC
AC voltage (50/60 Hz)
Dissipation Factor (MAX)
25°C
Insulation Resistance
@25°C (<70% RH)for 1 minute at
100VDC applied
Self Inductance
Capacitance Drift Factor
Life Expectancy
Failure quota
Damp Heat test
Self Inductance
Capacitance Drift Factor
Capacitance Temperature
Coefficient
Dielectric Strength
Dielectric
Construction
Coating
Leads
NXP MCU
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