SML40L57
TO–264AA Package Outline.
Dimensions in mm (inches)
1.80 (0.071)
2.01 (0.079)
4.60 (0.181)
5.21 (0.205)
19.51 (0.768)
26.49 (0.807)
3.10 (0.122)
3.48 (0.137)
5.79 (0.228)
6.20 (0.244)
25.48 (1.003)
26.49 (1.043)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
2
3
2.29 (0.090)
2.69 (0.106)
2.79 (0.110)
3.18 (0.125)
V
DSS
400V
57A
I
D(cont)
R
DS(on)
0.070
W
•
•
•
•
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular TO–264 Package
0.48 (0.019)
0.84 (0.033)
2.59 (0.102)
3.00 (0.118)
19.81 (0.780)
21.39 (0.842)
Pin 1 – Gate
Pin 2 – Drain
2.29 (0.090)
2.69 (0.106)
0.76 (0.030)
1.30 (0.051)
5.45 (0.215) BSC
2 plcs.
Pin 3 – Source
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
400
57
228
±30
±40
520
4.16
–55 to 150
300
57
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 1.54mH, R
G
= 25
W
, Peak I
L
= 57A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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SML40L57
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Characteristic
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Test Conditions
V
GS
= 0V , I
D
= 250
m
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 2.5mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
2
57
0.070
Min.
400
Typ.
Max. Unit
V
25
250
±100
4
m
A
nA
V
A
W
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
R
G
= 0.6
W
I
D
= I
D
[Cont.] @ 25°C
Min.
Typ.
7410
1140
450
330
40
127
16
16
54
5
ns
nC
Max. Unit
pF
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/
m
s
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/
m
s
Min.
Typ.
Max. Unit
57
A
228
1.3
540
11.8
V
ns
m
C
Max. Unit
0.24
°C/W
40
THERMAL CHARACTERISTICS
R
q
JC
R
q
JA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
m
S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Min.
Typ.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
6/99
stm32/stm8
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