Absolute Maximum Ratings
Symbol
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
T
j
, (T
stg
)
V
isol
humidity
climate
Diodes
9)
I
F
I
FM
= – I
CM
I
FSM
I
2
t
Conditions
1)
R
GE
= 20 kΩ
T
case
= 25/80
°C
T
case
= 25/80
°C;
t
p
= 1 ms
per IGBT/D1/D8,T
case
=25°C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
T
case
= 80
°C
T
case
= 80
°C;
t
p
= 1 ms
t
p
= 10 ms; sin.; T
j
= 150 °C
t
p
= 10 ms; T
j
= 150 °C
Values
Units
1200
1200
40 / 25
70 / 50
±
20
200 / 50 / 125
– 40 . . .+150 (125)
2 500
Class F
40/125/56
D1-6
9)
350
600
D7
15
30
200
200
D8
30
50
350
600
V
V
A
A
V
W
°C
V
SEMITRANS
®
M
IGBT Modules
SKD 40 GAL 123 D
Input bridge B6U with
brake chopper
A
A
A
A
2
s
7D-Pack = 7 Diodes Pack
Characteristics
Symbol
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
V
CEsat
g
fs
C
CHC
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on 5)
E
off 5)
Conditions
1)
V
GE
= 0, I
C
= 0,8 mA
V
GE
= V
CE
, I
C
= 1 mA
T
j
= 25
°C
V
GE
= 0
½
V
CE
= V
CES
T
j
= 125
°C
V
GE
= 20 V, V
CE
= 0
I
C
= 25 A
V
GE
= 15 V;
½
I
C
= 40 A
T
j
= 25 (125)
°C
V
CE
= 20 V, I
C
= 25 A
per IGBT
V
GE
= 0
½
V
CE
= 25 V
f = 1 MHz
min.
typ.
max.
–
6,5
1
–
200
3(3,7)
–
–
300
2100
300
150
–
–
–
–
–
–
2,5
–
1,2
70
–
–
2,5
–
1,2
44
–
–
0,6 / 2,5
1,5 / 1,0
0,05/ 0,4
Units
V
V
mA
mA
nA
V
V
S
pF
pF
pF
pF
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
≥
V
CES
–
4,5
5,5
–
0,1
–
3
–
–
–
2,5(3,1)
–
3,1(3,9)
20
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1600
250
110
70
55
400
40
3,8
2,3
2,0(1,8)
2,3(2,1)
–
45
12(16)
1(2,7)
2,0(1,8)
2,3(2,1)
1,1
25
19(25)
1,5(4,5)
–
–
–
SKD 40 GAL
Features
•
Round main terminals (2 mm∅)
•
Easy drilling of PCB
•
Input diodes glass passivated
•
1400 V PIV, good for 500 V
AC
•
High I
2
t rating (inrush current)
•
IGBT is latch-up free, homoge-
neous NPT silicon-structure
•
High short circuit capability,
self limiting to 6 * I
cnom
•
Fast & soft CAL diodes
8)
•
Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
•
Large clearance (9 mm) and
creepage distances (13 mm).
Typical Applications:
Input rectifier bridge (B6U) with
brake chopper for PWM inverter
drives using SEMITRANS
SKM 40GD123D
1)
2)
3)
5)
8)
9)
½
V
CC
= 600 V
V
GE
= + 15 V / - 15 V
3)
I
C
= 25 A, ind. load
R
Gon
= R
Goff
= 40
Ω
T
j
= 125
°C
Inverse Diode D7
8)
V
F
= V
EC
I
F
= 15 A
V
GE
= 0 V;
½
I
F
= 25 A
T
j
= 25 (125)
°C
V
F
= V
EC
T
j
= 125 °C
V
TO
T
j
= 125
°C
r
T
I
F
= 15 A; T
j
= 25 (125)
°C
2)
I
RRM
Q
rr
I
F
= 15 A; T
j
= 25 (125)
°C
2)
FWD D8 Diode
8)
V
F
= V
EC
I
F
= 25 A
V
GE
= 0 V;
½
T
j
= 25 (125)
°C
I
F
= 40 A
V
F
= V
EC
T
j
= 125 °C
V
TO
T
j
= 125
°C
r
T
I
F
= 25 A; T
j
= 25 (125)
°C
2)
I
RRM
Q
rr
I
F
= 25 A; T
j
= 25 (125)
°C
2)
Thermal Characteristics
per IGBT / diode D1...6
9)
R
thjc
per diode D7 / D8
R
thjc
per module / diode; IGBT
R
thch
T
case
= 25
°C,
unless otherwise
specified
I
F
= – I
C
, V
R
= 600 V,
– di
F
/dt = 500 A/µs
,
V
GE
= 0 V
Use V
GEoff
= -5 ... -15 V
See fig. 2 + 3; R
Goff
= 40
Ω
CAL = Controlled Axial Lifetime
Technology.
Data D1 - D6, case and
mech. data
→
page B6 - 224
©
by SEMIKRON
0898
B 6 – 219
SKD 40 GAL 123 D
3WRW >:@
;54
P:V
M040GD12.xls -2
43
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
R
G
= 40
Ω
41 1
(
7& >&@
,
&
$
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
Fig. 2 Turn-on /-off energy = f (I
C
)
,& >$@
;54
P:V
M040GD12.xls -3
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 25 A
XV
1 pulse
T
C
= 25 °C
T
j
< 150 °C
43
XV
PV
41 1
(
5
*
Ω
PV
9 &( >9@
Fig. 3 Turn-on /-off energy = f (R
G
)
,&SXOV ,&
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
, &6&, &
;54
;54
T
j
< 150 °C
V
GE
= + 15 V
R
Goff
= 40
Ω
I
C
= 25 A
1RWH
$OORZHG QXPEHUV RI
VKRUW FLUFXLW
7LPH EHWZHHQ VKRUW
FLUFXLW !V
T
j
< 150 °C
V
GE
= + 15 V
t
sc
< 10
µs
L < 50 nH
I
C
= 25 A
9&( >9@
9&( >9@
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
B 6 – 220
0898
© by SEMIKRON
,& >$@
YSR
T
j
= 150 °C
V
GE
> 15 V
7& >&@
Fig. 8 Rated current vs. temperature I
C
= f (T
C
)
,& >$@
9
9
9
9
9
9
;54
,& >$@
9
9
9
9
9
9
;54
9&( >9@
Fig. 9 Typ. output characteristic, t
p
= 80
µs;
25 °C
9&( >9@
Fig. 10 Typ. output characteristic, t
p
= 80
µs;
125 °C
,& >$@
;54
P
cond(t)
= V
CEsat(t)
. I
C(t)
V
CEsat(t)
= V
CE(TO)(Tj)
+ r
CE(Tj)
. I
C(t)
V
CE(TO)(Tj)
≤
1,5 + 0,002 (T
j
- 25) [V]
typ.: r
CE(Tj)
=
0,040 + 0,00016 (T
j
- 25) [Ω]
max.: r
CE(Tj)
=
0,060 + 0,00020 (T
j
- 25) [Ω]
valid for V
GE
= + 15
+
2
[V]; I
C
≥
0,3 I
Cn
−
1
9*( >9@
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
Fig. 12 Typ. transfer characteristic, t
p
= 80
µs;
V
CE
= 20 V
© by SEMIKRON
0898
B 6 – 221
SKD 40 GAL 123 D
9*( >9@
&RVV
;54
& >Q)@
YSR
9
9
I
Cpuls
= 25 A
&LVV
V
GE
= 0 V
f = 1 MHZ
C
ies
C
oes
C
res
&UVV
4* >Q&@
Fig. 13 Typ. gate charge characteristic
9&( >9@
Fig. 14 Typ. capacitances vs.V
CE
QV
M040GD12.xls-15
M040GD12.xls - 16
9/411
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
R
Gon
= 40
Ω
R
Goff
= 40
Ω
induct. load
9/411
QV
T
j
= 125 °C
V
CE
= 600 V
V
GE
= + 15 V
I
C
= 25 A
induct. load
9/43
97
91
9/43
97
91
W
W
,
&
$
5
*
Ω
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
P-
M040GD12.X LS-18
'
&&
'
%
M
S
'
*(
[ '
#
*
Ω
Ω
Ω
Ω
100 Ω
(
RII'
,
)
$
Fig. 17 Typ. CAL diode D8 forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 – 222
0898
© by SEMIKRON
© by SEMIKRON
0898
B 6 – 223
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