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SML1004R2CN.02

产品描述Power Field-Effect Transistor, 3A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
产品类别分立半导体    晶体管   
文件大小42KB,共2页
制造商TT Electronics plc
官网地址http://www.ttelectronics.com/
下载文档 详细参数 选型对比 全文预览

SML1004R2CN.02概述

Power Field-Effect Transistor, 3A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN

SML1004R2CN.02规格参数

参数名称属性值
包装说明TO-254, 3 PIN
Reach Compliance Codecompliant
外壳连接ISOLATED
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压1000 V
最大漏极电流 (ID)3 A
最大漏源导通电阻4.2 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-254AA
JESD-30 代码S-MSFM-P3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料METAL
封装形状SQUARE
封装形式FLANGE MOUNT
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)13.2 A
认证状态Not Qualified
表面贴装NO
端子形式PIN/PEG
端子位置SINGLE
晶体管元件材料SILICON
Base Number Matches1

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SML1004R2CN.02
TO–254 Package Outline.
Dimensions in mm (inches)
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
1 .2 7 (.0 5 0 )
1 .0 2 (.0 4 0 )
6 .6 0 (.2 6 0 )
6 .3 2 (.2 4 9 )
1 3 .8 4 (.5 4 5 )
1 3 .5 9 (.5 3 5 )
6 .9 1 (.2 7 2 )
6 .8 1 (.2 6 8 )
3 .7 8 (.1 4 9 )
3 .5 3 (.1 3 9 )
2 0 .3 2 (.8 0 0 )
2 0 .0 6 (.7 9 0 )
1 3 .8 4 (.5 4 5 )
1 3 .5 9 (.5 3 5 )
1 7 .4 0 (.6 8 5 )
1 6 .8 9 (.6 6 5 )
D IA
R 1 .0 1 (.0 4 0 ) M IN
G a te
S o u rc e
D r a in
1 .1 4 (.0 4 5 )
0 .8 9 (0 .3 5 )
D ia T y p
3 L e a d s
4 .9 5 (.1 9 5 )
4 .1 9 (.1 6 5 )
3 .8 1 (.1 5 0 ) B S C
9 .5 2 (.3 7 5 )
8 .7 6 (.3 4 5 )
3 .8 1 (.1 5 0 ) B S C
V
DSS
I
D(cont)
R
DS(on)
1000V
3.3A
4.20Ω
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
1000
3.0
13.2
±30
125
1.0
–55 to 150
300
V
A
A
V
W
W / °C
°C
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
Characteristic
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
Drain – Source Breakdown Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
=10V , I
D
= 0.5 I
D
[Cont.]
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
2
Min.
1000
3.3
4.20
250
1000
±100
4
Typ.
Max. Unit
V
A
µA
nA
V
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
DOC 7466 Iss1

SML1004R2CN.02相似产品对比

SML1004R2CN.02
描述 Power Field-Effect Transistor, 3A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
包装说明 TO-254, 3 PIN
Reach Compliance Code compliant
外壳连接 ISOLATED
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 1000 V
最大漏极电流 (ID) 3 A
最大漏源导通电阻 4.2 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-254AA
JESD-30 代码 S-MSFM-P3
元件数量 1
端子数量 3
工作模式 ENHANCEMENT MODE
最高工作温度 150 °C
封装主体材料 METAL
封装形状 SQUARE
封装形式 FLANGE MOUNT
极性/信道类型 N-CHANNEL
最大脉冲漏极电流 (IDM) 13.2 A
认证状态 Not Qualified
表面贴装 NO
端子形式 PIN/PEG
端子位置 SINGLE
晶体管元件材料 SILICON
Base Number Matches 1

 
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