DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD16803
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The
µ
PD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage.
By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage
and power consumption as compared with conventional driver circuits that use bipolar transistors.
In addition, the drive current can be adjusted by an external resistor in a power-saving mode.
The
µ
PD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head
actuator of an FDD.
FEATURES
• Low ON resistance (sum of ON resistors of top and bottom transistors)
R
ON1
= 1.5
Ω
TYP. (V
M
= 5.0 V)
R
ON2
= 2.0
Ω
TYP. (V
M
= 12.0 V)
• Low current consumption: I
DD
= 0.4 mA TYP.
• Stop mode function that turns OFF all output transistors
• Compact surface mount package: 20-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
C1H
C2L
V
M1
1A
PGND
2A
V
DD
IN
1
IN
2
INC
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
C1L
C2H
V
G
1B
PGND
2B
V
M2
R
X
PS
DGND
Document No. S11452EJ2V0DS00 (2nd edition)
Date Published July 1997 N
Printed in Japan
©
1997
µ
PD16803
ORDERING INFORMATION
Part Number
Package
20-pin plastic SOP (300 mil)
µ
PD16803GS
BLOCK DIAGRAM
0.01
µ
F
V
DD
C1L
C1H C2L
0.01
µ
F
C2H
V
G
0.01
µ
F
OSC
CIRCUIT
CHARGE
PUMP
2
×
V
DD
+ V
M
Note 1
V
M
V
M1
R
X
BAND GAP
REFERENCE
LEVEL CONTROL
CIRCUIT
“H”
BRIDGE 1
Note 2
1A
1B
PGND
V
M2
Note 3
PS
SWITCH
CIRCUIT
50 kΩ
50 kΩ
50 kΩ
IN
1
IN
2
INC
DGND
PGND
CONTROL
CIRCUIT
LEVEL
SHIFT
2A
“H”
BRIDGE 2
2B
50 kΩ
Connected in diffusion layer
Notes 1.
3
×
V
DD
where V
M
≤
V
DD
2.
The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump
circuit is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current.
In the power-saving mode, the motor cannot turn.
3.
It is recommended to connect an external capacitor of 0.22
µ
F or more between V
M
and GND to stabilize
the operation.
2
µ
PD16803
FUNCTION TABLE
Excitation Direction
<1>
<2>
<3>
<4>
–
INC
H
H
H
H
L
IN
1
H
L
L
H
×
IN
2
H
H
L
L
×
H
1
F
R
R
F
Stop
H
2
F
F
R
R
H
2
R
H
1
F
<4>
<1>
H
2
F
F: Forward
R: Reverse
<3>
H
1
R
<2>
For the excitation waveform timing chart, refer to
APPLICATION EXAMPLE.
FORWARD
V
M
REVERSE
V
M
STOP
V
M
ON
OFF
OFF
ON
OFF
OFF
A
B
A
B
A
B
OFF
ON
ON
OFF
OFF
OFF
3
µ
PD16803
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Supply voltage (motor block)
Supply voltage (control block)
Power consumption
Symbol
V
M
V
DD
P
d1
P
d2
Instantaneous H bridge driver current
Input voltage
Operating temperature range
Operation junction temperature
Storage temperature range
I
D
(pulse)
V
IN
T
A
T
jMAX
.
T
stg
Rating
–0.5 to +15
–0.5 to +7
1.0
Note 1
1.25
Note 2
±1.0
Note 2, 3
–0.5 to V
DD
+ 0.5
0 to 60
150
–55 to +125
A
V
°C
°C
°C
Unit
V
V
W
Notes 1.
IC only
2.
When mounted on a printed circuit board (100
×
100
×
1 mm, glass epoxy)
3.
t
≤
5 ms, Duty
≤
40 %
P
d
– T
A
Characteristics
1.4
When mounted
on printed circuid boad
1.2
Average power consumption P
d
(W)
IC only
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
100
Ambient temperature T
A
(˚C)
4
µ
PD16803
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply voltage (motor block)
Supply voltage (control block)
R
X
pin connection resistance
H bridge driver current
Note
Charge pump capacitance
Operating temperature
Symbol
V
M
V
DD
R
X
I
DR
C
1
to C
3
T
A
5
0
MIN.
4.0
4.0
2
±380
20
60
TYP.
5.0
5.0
MAX.
13.2
6.0
Unit
V
V
kΩ
mA
nF
°C
Note
When mounted on a printed circuit board (100
×
100
×
1 mm, glass epoxy)
ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
Parameter
OFF V
M
pin current
Symbol
I
M
Conditions
INC pin low
Note 1
V
M
= 6.0 V
V
DD
= 6.0 V
V
M
= 13.2 V
V
DD
= 6.0 V
V
DD
pin current
IN
1
, IN
2
, INC pin high-level
input current
IN
1
, IN
2
, INC pin low-level input
current
PS pin high-level input current
I
IH2
I
IL1
I
DD
I
IH1
Note 2
T
A
= 25
°C,
V
IN
= V
DD
0
≤
T
A
≤
60
°C,
V
IN
= V
DD
T
A
= 25
°C,
V
IN
= 0 V
0
≤
T
A
≤
60
°C,
V
IN
= 0 V
T
A
= 25
°C,
V
IN
= V
DD
0
≤
T
A
≤
60
°C,
V
IN
= V
DD
PS pin low-level input current
I
IL2
T
A
= 25
°C,
V
IN
= 0 V
0
≤
T
A
≤
60
°C,
V
IN
= 0 V
IN
1
, IN
2
, INC pin input pull-up
resistance
PS pin input pull-down resistance
R
IND
R
INU
T
A
= 25
°C
0
≤
T
A
≤
60
°C
T
A
= 25
°C
0
≤
T
A
≤
60
°C
Control pin high-level input voltage
Control pin low-level input voltage
H bridge circuit ON
resistance
Note 3
R
ON
relative accuracy
V
IH
V
IL
R
ON1
R
ON2
V
DD
= 5 V, V
M
= 5 V
V
DD
= 5 V, V
M
= 12 V
Excitation direction <2>, <4>
Note 4
Excitation direction <1>, <3>
V
X
voltage in power-saving mode
Note 5
V
X
relative accuracy in
power-saving mode
Charge pump circuit (V
G
) turn ON time
H bridge circuit turn ON time
H bridge circuit turn OFF time
T
ONG
T
ONH
T
OFFH
V
X
V
DD
= V
M
= 5 V, R
X
= 50 kΩ
Excitation direction <2>, <4>
Note 4
Excitation direction <1>, <3>
V
DD
= 5 V, V
M
= 5 V
C
1
= C
2
= C
3
= 10 nF
R
M
= 20
Ω
0.3
2.5
±5
±5
2
5
5
ms
35
25
35
25
3.0
–0.3
1.5
2.0
50
50
0.4
MIN.
TYP.
MAX.
1.0
1.0
1.0
1.0
2.0
–0.15
–0.2
0.15
0.2
–1.0
–2.0
65
75
65
75
V
DD
+ 0.3
0.8
3.0
4.0
±5
±10
V
%
%
V
V
Ω
kΩ
kΩ
mA
mA
Unit
µ
A
mA
mA
µ
A
µ
A
∆
R
ON
∆
V
X
µ
s
µ
s
Notes 1.
When V
DD
< V
M
, a current (I
M1
) always flow from the V
M1
pin to the charge pump circuit because a gate voltage
(2
×
V
DD
+ V
M
) is generated.
2.
When IN
1
= IN
2
= INC = “H”, PS = “L”
3.
Sum of ON resistances of top and bottom transistors
4.
For the excitation direction, refer to
FUNCTION TABLE.
5.
V
X
is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in Function Table.
5
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