Small Signal Bipolar Transistor
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compliant |
| 其他特性 | BUILT IN BIAS RESISTOR |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | PNP |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| 934058789115 | 934058821315 | PDTA115TM | PDTA115TE | PDTA115TT | PDTA115TU | PDTA115TS | PDTA115TK | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | CHIP CARRIER, R-PBCC-N3 | CHIP CARRIER, R-PBCC-N3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| 其他特性 | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| JESD-30 代码 | R-PDSO-G3 | R-PBCC-N3 | R-PBCC-N3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | O-PBCY-T3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | CHIP CARRIER | CHIP CARRIER | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
| 表面贴装 | YES | YES | YES | YES | YES | YES | NO | YES |
| 端子形式 | GULL WING | NO LEAD | NO LEAD | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
| 端子位置 | DUAL | BOTTOM | BOTTOM | DUAL | DUAL | DUAL | BOTTOM | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 | - | - |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
| 端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | - | - |
| 厂商名称 | - | - | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia |
| 峰值回流温度（摄氏度） | - | - | 260 | 260 | 260 | 260 | NOT SPECIFIED | NOT SPECIFIED |
| 处于峰值回流温度下的最长时间 | - | - | 30 | 30 | 30 | 30 | NOT SPECIFIED | NOT SPECIFIED |
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