TK80A08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK80A08K3
Switching Regulator Applications
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 3.6 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 200 S
Low leakage current: I
DSS
= 10
μA
(max) (V
DS
= 75 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
75
75
±
20
80
320
40
443
80
4
150
−55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
-
SC-67
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.125
62.5
Unit
°C/W
°C/W
Internal Connection
2
Note 1: Ensure that the channel and lead temperatures do not exceed 150°C.
Note 2: V
DD
=
25 V, T
ch
=
25°C, L
=
100
μH,
I
AR
=
80 A, R
G
=
1
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1
2008-03-28
TK80A08K3
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance (Note 4)
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
I
D
=
40 A
V
OUT
R
L
=
0.75
Ω
V
DS
=
10V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±20
V, V
DS
=
0 V
V
DS
=
75 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
-20 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
40A
V
DS
=
10 V, I
D
=
40 A
Min
⎯
⎯
75
55
2.0
⎯
100
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
3.6
200
8200
770
1140
30
Max
±1
10
⎯
⎯
4.0
4.5
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
mΩ
S
⎯
10 V
⎯
⎯
⎯
ns
⎯
⎯
⎯
⎯
Turn-ON time
Switching time
Fall time
t
on
V
GS
0V
55
4.7
Ω
t
f
V
DD
∼
30 V
−
Duty
≤
1%, t
w
=
10
μs
33
⎯
⎯
⎯
⎯
⎯
⎯
nC
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Gate switch charge
t
off
150
Qg
Q
gs1
Q
gd
Q
SW
V
DD
∼
60 V, V
GS
=
10 V, I
D
=
80A
−
⎯
⎯
⎯
⎯
175
40
65
80
Note 4: Measured at lead standoff.
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
80 A, V
GS
=
0 V
I
DR
=
80 A, V
GS
=
0 V,
dI
DR
/dt
=
50 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
−0.9
60
60
Max
80
320
−1.2
⎯
⎯
Unit
A
A
V
ns
nC
Marking
K80A08K
3
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free Finish
2
2008-03-28
TK80A08K3
R
DS (ON)
−
Tc
10
Common source
VGS
=
10 V
Pulse Test
40
ID
=
80 A
1000
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
Drain reverse current IDR (A)
Drain-source ON-resistance
RDS
(ON)
(mΩ)
8
300
10
5
3
100
6
20
30
4
10
1
VGS
=
0
3
2
0
−80
−40
0
40
80
120
160
1
0
0.4
0.8
1.2
1.6
2.0
Case temperature Tc (°C)
Drain-source voltage
VDS
(V)
Capacitance – V
DS
100000
5
V
th
−
Tc
Common source
VDS
=
10 V
ID
=
1mA
Pulse Test
Gate threshold voltage Vth (V)
4
(pF)
10000
Ciss
Capacitance C
3
2
1000
Common source
VGS
=
0 V
f =1MHz
Tc
=
25°C
1
10
Coss
1
Crss
100
0.1
100
0
−80
−40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Case temperature Tc (°C)
P
D
−
Tc
50
100
Dynamic input / output
characteristics
Common source
ID
=
80 A
Ta
=
25°C
Pulse Test
20
Drain power dissipation PD (W)
40
80
16
15
30
VDD
=
60V
12
VDS
Drain-source voltage
20
40
VGS
20
8
10
4
0
0
40
80
120
160
0
0
60
120
180
0
240
Case temperature Tc (°C)
Total gate charge Qg (nC)
4
2008-03-28
Gate-source voltage
30
VDS
60
VGS (V)
(V)
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