89LV1632
16 Megabit (512K x 32-Bit)
Low Voltage MCM SRAM
16 Megabit (512k x 32-bit) SRAM MCM
CS 1-4
Address
OE, WE
89LV1632
Power
4Mb SRAM
4Mb SRAM
4Mb SRAM
4Mb SRAM
Ground
MCM
Memory
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
Logic Diagram
F
EATURES
:
• Four 512k x 8 SRAM die
• R
AD
-P
AK
® technology hardens against natural space radia-
tion technology
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL > 101MeV-cm
2
/mg
- SEU threshold = 3 MeV-cm
2
/mg
- SEU saturated cross section: 8E-9 cm
2
/bit
• Package: 68-pin quad flat package
• Completely static memory - no clock or timing strobe
required
• Internal bypass capacitor
• High-speed silicon-gate CMOS technology
• 3.3 V ± 10% power supply
• Equal address and chip enable access times
• Three-state outputs
• All inputs and outputs are TTL compatible
D
ESCRIPTION
:
Maxwell Technologies’ 89LV1632 high-performance 16 Mega-
bit Multi-Chip Module (MCM) Static Random Access Memory
features a greater than 100 krad(Si) total dose tolerance,
depending upon space mission. The four 4-Megabit SRAM die
and bypass capacitors are incorporated into a high-reliable
hermetic quad flat-pack ceramic package. With high-perfor-
mance silicon-gate CMOS technology, the 89LV1632 reduces
power consumption and eliminates the need for external
clocks or timing strobes. It is equipped with output enable
(OE) and four byte chip enable (CS1 - CS4) inputs to allow
greater system flexibility. When OE input is high, the output is
forced to high impedance.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. In a GEO orbit, R
AD
-P
AK
® packaging provides greater
than 100 krad(Si) total radiation dose tolerance, dependent
upon space mission. It eliminates the need for box shielding
while providing the required radiation shielding for a lifetime in
orbit or a space mission. This product is available in with
screening up to Maxwell Technologies self-defined Class K.
08.18.05 Rev 3
All data sheets are subject to change without notice
1
(619) 503-3300 - Fax: (619) 503-3301 - www.maxwell.com
©2005 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
1. P
INOUT
D
ESCRIPTION
P
IN
34-28, 42-36, 62-64, 7, 8
65
66
3-6
43-46, 48-51,53-56, 58-61,
9-12, 14-17, 19-22, 24-27
2, 67, 68
1, 18, 35, 52
13, 23, 47, 57
S
YMBOL
A0-A18
WE
OE
CS1 - CS4
I/O0-I/O31
NC
V
CC
V
SS
D
ESCRIPTION
Address Enable
WriteEnable
Output Enable
Chip Enable
Data Input/Output
No Connection
+3.3V Power Supply
Ground
89LV1632
T
ABLE
2. 89LV1632 A
BSOLUTE
M
AXIMUM
R
ATINGS
(V
OLTAGE REFERENCED TO
V
SS
= 0V)
P
ARAMETER
Power Supply Voltage Relative to V
SS
Voltage Relative to V
SS
for Any Pin Except V
CC
Weight
Thermal Resistance
Power Dissipation
Operating Temperature
Storage Temperature
F
JC
P
D
T
A
T
S
--
-55
-65
S
YMBOL
V
CC
V
IN
, V
OUT
M
IN
-0.5
-0.5
M
AX
+7.0
V
CC
+0.5
42
3.6
4.0
+125
+150
U
NITS
V
V
Grams
°
C/W
Memory
W
°
C
°
C
T
ABLE
3. 89LV1632 R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Supply Voltage, (Operating Voltage Range)
Input High Voltage
Input Low Voltage
1. V
IH
(max) = V
CC
+ 2V ac (pulse width < 10ns) for I < 80 mA.
2. V
IL
(min) = -2.0V ac; (pulse width < 20 ns) for I < 80 mA.
S
YMBOL
V
CC
V
IH
V
IL
M
IN
3.0
2.2
-0.5
(2)
M
AX
3.6
V
CC
+ 0.5
(1)
0.8
U
NITS
V
V
V
08.18.05 REV 3
All data sheets are subject to change without notice
2
©2005 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
4. 89LV1632 D
ELTA
L
IMITS
P
ARAMETER
I
CC
I
SB
I
SB1
I
LI
V
ARIATIONL
+10% of stated value in table 5
+10% of stated value in table 5
+10% of stated value in table 5
+10% of stated value in table 5
89LV1632
T
ABLE
5. 89LV1632 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Average Operating Current
Cycle Time:
35 ns
Standby Power Supply Current
CMOS Standby Power Supply
Current
Output Low Voltage
Output High Voltage
Input Capacitance
1
CS1 - CS4,
OE, WE
I/O0-7, I/O8-15, I/O16-23,
I/O24-31
A0 - A18
Output Capacitance
1
1. Guaranteed by design.
S
YMBOL
T
EST
C
ONDITIONS
I
LI
I
LO
I
CC
V
IN
= 0 to V
CC
CS = V
IH
, V
OUT
= V
SS
to V
CC
Min. Cycle, 100% Duty, CS = V
IL
,
I
OUT
= 0 mA
V
IN
= V
IH
or V
IL
CS= V
IH
, Min Cycle
CS > V
CC
- 0.2V, f = 0 MHz, V
IN
>
V
CC
- 0.2V or
V
IN <
0.2V
I
OL
= + 8.0 mA
I
OH
= -4.0 mA
V
IN
= 0 V
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
--
1, 2, 3
1, 2, 3
--
--
--
--
M
IN
-8.0
-8.0
T
YP
--
--
--
640
240
40
mA
mA
M
AX
+8.0
+8.0
U
NITS
uA
uA
mA
Memory
I
SB
I
SB1
V
OL
V
OH
C
IN
1, 2, 3
1, 2, 3
4, 5, 6
--
2.4
--
--
0.4
--
7
28
7
7
28
V
V
pF
C
OUT
V
I/O
= 0 V
4, 5, 6
8
pF
T
ABLE
6. 89LV1632 AC O
PERATING
C
ONDITIONS AND
C
HARACTERISTICS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Input Pulse Level
Output Timing Measurement Reference Level
08.18.05 REV 3
M
IN
0.0
--
T
YP
--
--
M
AX
3.0
1.5
U
NITS
V
V
All data sheets are subject to change without notice
3
©2005 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Input Rise/Fall Time
Input Timing Measurement Reference Level
M
IN
--
--
T
YP
--
--
89LV1632
M
AX
3.0
1.5
U
NITS
ns
V
T
ABLE
6. 89LV1632 AC O
PERATING
C
ONDITIONS AND
C
HARACTERISTICS
T
ABLE
7. 89LV1632 R
EAD
C
YCLE
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Read Cycle Time
-30
Address Access Time
-30
Chip Select to Output
-30
Output Enable to Output
-30
Output Enable to Low-Z Output
-30
Chip Enable to Low-Z Output
-30
Output Disable to High-Z Output
-30
Chip Disable to High-Z Output
-30
Output Hold from Address Change
-30
Chip Select to Power Up Time
-30
Chip Select to Power DownTime
-30
S
YMBOL
t
RC
t
AA
t
CO
t
OE
t
OLZ
t
LZ
t
OHZ
t
HZ
t
OH
T
PU
T
PD
S
UBGROUPS
9, 10, 11
30
9, 10, 11
--
9, 10, 11
--
9, 10, 11
--
9, 10, 11
--
9, 10, 11
--
9, 10, 11
--
9, 10, 11
--
9, 10, 11
3
9, 10, 11
9, 10, 11
--
--
--
0
20
--
--
--
ns
ns
8
--
ns
8
--
ns
3
--
ns
0
--
ns
--
-
--
30
ns
14
ns
--
30
ns
--
--
ns
M
IN
T
YP
M
AX
U
NITS
ns
Memory
T
ABLE
8. 89LV1632 F
UNCTIONAL
D
ESCRIPTION
CS
H
L
L
L
1. X = don’t care.
08.18.05 REV 3
WE
X
1
H
H
L
OE
X
1
H
L
X
1
M
ODE
Not Select
Output Disable
Read
Write
I/O P
IN
High-Z
High-Z
D
OUT
D
IN
S
UPPLY
C
URRENT
I
SB
, I
SB1
I
CC
I
CC
I
CC
All data sheets are subject to change without notice
4
©2005 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
9. 89LV1632 W
RITE
C
YCLE
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Write Cycle Time
-30
Chip Select to End of Write
-30
Address Set-up Time
-30
Address Valid to End of Write
-30
Write Pulse Width (OE High)
-30
Write Pulse Width (OE Low)
-30
Write Recovery Time
-30
Write to Output High-Z
-30
Data to Write Time Overlap
-30
Data Hold from Write Time
-30
End Write to Output Low-Z
-30
S
YMBOL
t
WC
t
CW
t
AS
t
AW
t
WP
t
WP1
t
WR
t
WHZ
t
DW
t
DH
t
OW
S
UBGROUPS
9, 10, 11
30
9, 10, 11
20
9, 10, 11
0
9, 10, 11
20
9, 10, 11
20
9, 10, 11
30
9, 10, 11
0
9, 10, 11
--
9, 10, 11
14
9, 10, 11
0
9, 10, 11
--
3
9
M
IN
T
YP
89LV1632
M
AX
--
U
NITS
ns
ns
--
ns
--
ns
--
ns
--
ns
--
ns
--
ns
--
ns
--
ns
--
ns
--
Memory
08.18.05 REV 3
All data sheets are subject to change without notice
5
©2005 Maxwell Technologies.
All rights reserved.
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