128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
128 × 8 I2C/2-线 串行 电可擦除只读存储器, PDIP8
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP8,.3 |
| 针数 | 8 |
| Reach Compliance Code | compli |
| Factory Lead Time | 15 weeks |
| 其他特性 | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED |
| 最大时钟频率 (fCLK) | 0.4 MHz |
| 数据保留时间-最小值 | 200 |
| 耐久性 | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DDDR |
| JESD-30 代码 | R-PDIP-T8 |
| JESD-609代码 | e3 |
| 长度 | 9.27 mm |
| 内存密度 | 1024 bi |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 128 words |
| 字数代码 | 128 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 128X8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP8,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.334 mm |
| 串行总线类型 | I2C |
| 最大待机电流 | 0.00005 A |
| 最大压摆率 | 0.003 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Matte Tin (Sn) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| 最长写入周期时间 (tWC) | 1 ms |
| Base Number Matches | 1 |
| 24C01C-I/P | 24C01C_08 | 24C01C-I/MNY | 24C01C-E/ST | 24C01C-E/SN | 24C01C-E/MS | 24C01C-E/MNY | 24C01C | |
|---|---|---|---|---|---|---|---|---|
| 描述 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 组织 | 128X8 | 128X8 | 128X8 | 128X8 | 128X8 | 128X8 | 128X8 | 128X8 |
| 表面贴装 | NO | YES | YES | YES | YES | YES | YES | YES |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | AUTOMOTIVE | AUTOMOTIVE | AUTOMOTIVE | AUTOMOTIVE | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE | GULL WING | NO LEAD | GULL WING | GULL WING | GULL WING | NO LEAD | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 是否无铅 | 不含铅 | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | - |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | 符合 | 符合 | - |
| 零件包装代码 | DIP | - | DFN | SOIC | SOIC | MSOP | DFN | - |
| 包装说明 | DIP, DIP8,.3 | - | 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8 | 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | ROHS COMPLIANT, PLASTIC, MSOP-8 | 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8 | - |
| 针数 | 8 | - | 8 | 8 | 8 | 8 | 8 | - |
| Reach Compliance Code | compli | - | compli | compli | compli | compli | compli | - |
| 最大时钟频率 (fCLK) | 0.4 MHz | - | 0.4 MHz | 0.4 MHz | 0.4 MHz | 0.4 MHz | 0.4 MHz | - |
| 数据保留时间-最小值 | 200 | - | 200 | 200 | 200 | 200 | 200 | - |
| 耐久性 | 1000000 Write/Erase Cycles | - | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | - |
| I2C控制字节 | 1010DDDR | - | 1010DDDR | 1010DDDR | 1010DDDR | 1010DDDR | 1010DDDR | - |
| JESD-30 代码 | R-PDIP-T8 | - | R-PDSO-N8 | R-PDSO-G8 | R-PDSO-G8 | S-PDSO-G8 | R-PDSO-N8 | - |
| JESD-609代码 | e3 | - | e4 | e3 | e3 | e3 | e4 | - |
| 长度 | 9.27 mm | - | 3 mm | 4.4 mm | 4.9 mm | 3 mm | 3 mm | - |
| 内存密度 | 1024 bi | - | 1024 bi | 1024 bi | 1024 bi | 1024 bi | 1024 bi | - |
| 内存集成电路类型 | EEPROM | - | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | - |
| 字数 | 128 words | - | 128 words | 128 words | 128 words | 128 words | 128 words | - |
| 字数代码 | 128 | - | 128 | 128 | 128 | 128 | 128 | - |
| 工作模式 | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - |
| 最高工作温度 | 85 °C | - | 85 °C | 125 °C | 125 °C | 125 °C | 125 °C | - |
| 最低工作温度 | -40 °C | - | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | - |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装代码 | DIP | - | HVSON | TSSOP | SOP | TSSOP | HVSON | - |
| 封装等效代码 | DIP8,.3 | - | SOLCC8,.11,20 | TSSOP8,.25 | SOP8,.25 | TSSOP8,.19 | SOLCC8,.11,20 | - |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | - |
| 封装形式 | IN-LINE | - | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | - |
| 并行/串行 | SERIAL | - | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | 260 | 260 | 260 | 260 | 260 | - |
| 电源 | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | - |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| 座面最大高度 | 5.334 mm | - | 0.8 mm | 1.2 mm | 1.75 mm | 1.1 mm | 0.8 mm | - |
| 串行总线类型 | I2C | - | I2C | I2C | I2C | I2C | I2C | - |
| 最大待机电流 | 0.00005 A | - | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | 0.00005 A | - |
| 最大压摆率 | 0.003 mA | - | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA | - |
| 最大供电电压 (Vsup) | 5.5 V | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - |
| 最小供电电压 (Vsup) | 4.5 V | - | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - |
| 标称供电电压 (Vsup) | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V | - |
| 技术 | CMOS | - | CMOS | CMOS | CMOS | CMOS | CMOS | - |
| 端子面层 | Matte Tin (Sn) | - | NICKEL PALLADIUM GOLD | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | NICKEL PALLADIUM GOLD | - |
| 端子节距 | 2.54 mm | - | 0.5 mm | 0.65 mm | 1.27 mm | 0.65 mm | 0.5 mm | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | 40 | 40 | 40 | 40 | 40 | - |
| 宽度 | 7.62 mm | - | 2 mm | 3 mm | 3.9 mm | 3 mm | 2 mm | - |
| 最长写入周期时间 (tWC) | 1 ms | - | 1 ms | 1.5 ms | 1.5 ms | 1.5 ms | 1.5 ms | - |
| Base Number Matches | 1 | - | 1 | 1 | 1 | 1 | 1 | - |
| 湿度敏感等级 | - | - | 1 | 1 | 1 | 1 | 1 | - |
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