Datasheet> 器件分类 > 分立半导体> 晶体管> CMPTA96TRLEADFREE

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CMPTA96TRLEADFREE: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小323KB，共2页; 制造商Central Semiconductor; 标准

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CMPTA96TRLEADFREE概述

Transistor

CMPTA96TRLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	,
Reach Compliance Code	compliant
最大集电极电流 (IC)	0.5 A
配置	Single
最小直流电流增益 (hFE)	50
最高工作温度	150 °C
极性/信道类型	PNP
最大功率耗散 (Abs)	0.35 W
表面贴装	YES
标称过渡频率 (fT)	20 MHz
Base Number Matches	1

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CMPTA96

SURFACE MOUNT

EXTREMELY HIGH VOLTAGE

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA96 type

is a surface mount epoxy molded PNP silicon planar

epitaxial transistor designed for extremely high voltage

applications.

MARKING CODE: C96

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

450

6.0

500

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICBO

VCB=400V

IEBO

VBE=4.0V

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

Cib

IC=100µA

IC=1.0mA

IE=10µA

IC=1.0mA, IB=0.1mA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

VCE=10V, IC=50mA

VCE=10V, IC=100mA

VCE=10V, IC=10mA, f=10MHz

VCB=20V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

450

6.0

500

490

9.7

MAX

100

UNITS

0.15

0.20

0.30

0.50

1.0

120

200

MHz

7.0

130

R3 (3-February 2010)

CMPTA96TRLEADFREE相似产品对比

	CMPTA96TRLEADFREE	CMPTA96LEADFREE
描述	Transistor	Small Signal Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
是否Rohs认证	符合	符合
Reach Compliance Code	compliant	compliant
最大集电极电流 (IC)	0.5 A	0.5 A
配置	Single	SINGLE
最小直流电流增益 (hFE)	50	25
最高工作温度	150 °C	150 °C
极性/信道类型	PNP	PNP
表面贴装	YES	YES
标称过渡频率 (fT)	20 MHz	20 MHz

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