CMXT3906
SURFACE MOUNT
DUAL PNP
SILICON TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT3906
type is a dual PNP silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose amplifier and switching
applications.
MARKING CODE: X2A
SOT-26 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
40
40
5.0
200
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICEV
VCE=30V, VEB=3.0V
50
BVCBO
IC=10μA
40
BVCEO
IC=1.0mA
40
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=10mA, IB=1.0mA
0.25
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
hie
IC=50mA,
IC=10mA,
IC=50mA,
IB=5.0mA
IB=1.0mA
IB=5.0mA
IC=0.1mA
IC=1.0mA
IC=10mA
0.65
60
80
100
60
30
250
4.5
10
12
0.40
0.85
0.95
UNITS
nA
V
V
V
V
V
V
V
VCE=1.0V,
VCE=1.0V,
VCE=1.0V,
300
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
MHz
pF
pF
kΩ
2.0
R3 (12-February 2010)
CMXT3906
SURFACE MOUNT
DUAL PNP
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
10
x10
-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
100
400
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
3.0
60
μS
NF
VCE=5.0V, IC=100μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
4.0
dB
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
225
ns
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
75
ns
SOT-26 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: X2A
R3 (12-February 2010)
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