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DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD16805
MONOLITHIC H BRIDGE DRIVER CIRCUIT
µ
PD16805 is the monolithic and H bridge driver IC which consists of a CMOS control circuit and a MOS output
stage.
As compared with the driver of a MOS process using the conventional bipolar transistor, reduction of
consumption current and power consumption is possible. With this product, clockwise and the inversion, and the
brake function are built in, and it is the best for the drive circuit of the motor for film winding up of a camera, and the
motor for auto focus/zooms.
The package has adopted the 16 pin SOP and the 24 pin TSSOP, and corresponds to reduction of mounting area
and mounting height. This product corresponds to the drive current to 1.0 A (DC).
FEATURES
•
High drive current
I
D(pulse)
= 4.2 A MAX. at PW
≤
200 ms (single pulse)
I
D(DC)
= 1.0 A (DC)
•
Low-ON resistance (sum of the upper and lower sides MOS FET)
R
ON
= 0.4
Ω
TYP. at I
D
= 1.0 A
•
Standby function that turns OFF charge pump circuit
•
Compact surface mount package
16-pin plastic SOP (1.27 mm pitch)
24-pin plastic TSSOP (0.5 mm pitch)
ORDERING INFORMATION
Part Number
Package
16-pin plastic SOP (7.64 mm (300))
24-pin plastic TSSOP (5.72 mm (225))
µ
PD16805GS
µ
PD16805MA-6A5
The information in this document is subject to change without notice.
Document No. S11032EJ4V0DS00 (4th edition)
Date Published July 2001 N CP(K)
Printed in Japan
©
1997
µ
PD16805
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, Glass epoxy substrate 100 mm
×
100 mm
×
1 mm, 15% copper foil)
°
Parameter
Supply voltage
V
G
pin applied voltage
Input voltage
H bridge drive current
H bridge drive current
Power consumption
Peak junction temperature
Storage temperature
Symbol
V
DD
V
M
V
G
V
IN
I
D(DC)
I
D(pulse)
P
T
DC
PW
≤
200 ms (single pulse)
GS
MA-6A5
T
CH(MAX)
T
stg
Control section
Motor section
Conditions
Rating
−0.5
to +6.5/+8.0
Note
−0.5
to +6.5/+8.0
Note
15
−0.5
to V
DD
+0.5
1.0
4.2
1.0
0.7
150
−55
to +150
Unit
V
V
V
V
A
A/ch
W
W
°C
°C
Note
When the charge pump is used/when VG power-source supply from the exterior.
RECOMMENDED OPERATING CONDITIONS
(T
A
= 25°C, Glass epoxy substrate 100 mm
×
100 mm
×
1 mm, 15% copper foil)
°
Parameter
Symbol
V
DD
V
M
Charge pump capacitance
V
G
pin applied voltage
Note 1
Conditions
During normal operation
All input pins are low
MIN.
3.0
2.5
0.5
TYP.
MAX.
6.0/7.5
Note 2
Unit
V
V
Supply voltage
C
1
to C
3
V
G
T
A
At the time of external input
Ambient temperature
11
−30
0.01
14
60
µ
F
V
°C
Operating temperature
Notes 1.
When voltage is impressed to VG terminal from the exterior
2.
When the charge pump is used/when VG power-source supply from the exterior.
ELECTRICAL SPECIFICATIONS
(Unless otherwise specified, V
DD
= recommended operating condition, V
M
= 0.5 to 6.0 V)
Parameter
Symbol
I
DD1
V
DD
pin current
I
DD2
Conditions
V
DD
= 5 V,
T
A
= Recommended conditions
Control pins at high level
V
DD
= 5 V,
T
A
= Recommended conditions
Control pins at low level
T
A
= Reommended conditions
Control pins at low level
Control pins at low level
I
D
= 1 A, V
DD
= V
M
= 5 V
C
1
= C
2
= C
3
= 0.01
µ
F
sum of the upper and lower
sides MOSFET
T
A
= Recommended conditions
T
A
= Recommended conditions
V
DD
= V
M
= 5 V,
T
A
= Recommended conditions
C
1
= C
2
= C
3
= 0.01
µ
F
I
D
= 1 A
35
T
A
= Recommended conditions
Data Sheet S11032EJ4V0DS
MIN.
TYP.
0.6
MAX.
2.0
Unit
mA
0.3
10
µ
A
µ
A
µ
A
Ω
V
M
pin current
I
M1
I
M2
0.1
10
1.0
H bridge ON resistance
R
ON
0.4
0.6
High-level input voltage
Low-level input voltage
Charge pump circuit turn-ON time
H bridge output circuit turn-ON time
H bridge output circuit turn-OFF time
Control pin input pull-down resistor
V
IH
V
IL
t
ONG
t
ONH
t
OFFH
R
IND
0.6
×
V
DD
0.2
×
V
DD
0.5
1.0
10
5.0
50
65
75
V
V
ms
µ
s
µ
s
kΩ
kΩ
25
2
嵌入式系统
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