This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP03383
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
For digital circuits
5
(0.30)
4
0.20
–0.02
+0.05
0.10
±0.02
M
ain
Di
sc te
on na
tin nc
ue e/
d
■
Features
•
Two elements incorporated into one package
(Transistors with built-in resistor)
•
Reduction of the mounting area and assembly cost by one half
•
UNR2213
+
UNR211F
1
2
3
(0.50) (0.50)
1.00
±0.05
1.60
±0.05
1.20
±0.05
1.60
±0.05
■
Basic Part Number
Tr1
Collector-base voltage
(Emitter open)
V
CBO
V
CEO
I
C
50
50
V
V
Collector-emitter voltage
(Base open)
Collector current
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
0 to 0.02
Parameter
Symbol
Rating
Unit
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
SSMini5-F2 Package
100
mA
V
V
Tr2
Collector-base voltage
(Emitter open)
V
CBO
V
CEO
I
C
−50
−50
Marking Symbol: DV
Internal Connection
5
Collector-emitter voltage
(Base open)
Collector current
4
−100
125
125
mA
°C
R
1
Overall
Total power dissipation
Junction temperature
Storage temperature
P
T
T
j
mW
°C
Tr1
Tr2
tin
T
stg
ue
R
2
R
1
R
2
−55
to
+125
1
2
3
Ma
int
en
an
ce
/D
isc
on
0.10 max
■
Absolute Maximum Ratings
T
a
=
25°C
d
pla inc
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Display at No.1 lead
(0.20)
5˚
0.55
±0.05
5˚
(0.20)
Publication date: December 2003
SJJ00255BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03383
■
Electrical Characteristics
T
a
=
25°C
±
3°C
•
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
80
Min
50
50
0.1
0.5
0.1
Typ
Max
Unit
V
V
µA
µA
mA
0.25
V
V
0.2
V
+30%
1.2
Output voltage low-level
Input resistance
V
OL
R
1
f
T
Resistance ratio
R
1
/ R
2
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
•
Tr2
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
V
CE(sat)
V
OH
V
OL
R
1
f
T
Resistance ratio
R
1
/ R
2
Common characteristics chart
150
Total power dissipation P
T
(mW)
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
2
Ma
int
en
P
T
T
a
an
ce
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
/D
Transition frequency
d
pla inc
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.
−30%
0.8
47
kΩ
1.0
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
150
MHz
Conditions
Min
−50
−50
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
−
0.1
−
0.5
−1.0
µA
µA
V
V
mA
V
CE
= −10
V, I
C
= −5
mA
30
I
C
= −10
mA, I
B
= −
0.3 mA
−
0.25
−
0.2
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
−4.9
V
−30%
4.7
+30%
kΩ
0.47
80
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
MHz
SJJ00255BED
M
ain
Di
sc te
on na
tin nc
ue e/
d
Collector-emitter saturation voltage
Output voltage high-level
V
CE(sat)
V
OH
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
4.9
isc
on
tin
ue
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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cy
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int
en
an
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M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
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