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UP04211G

产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN
产品类别分立半导体    晶体管   
文件大小658KB,共4页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
标准
下载文档 详细参数 选型对比 全文预览

UP04211G概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN

UP04211G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)35
JESD-30 代码R-PDSO-F6
JESD-609代码e6
湿度敏感等级1
元件数量2
端子数量6
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子面层Tin/Bismuth (Sn/Bi)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)150 MHz
Base Number Matches1

文档预览

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This product complies with the RoHS Directive (EU
2002/95/EC).
Composite Transistors
UP04211G
Silicon NPN epitaxial planar type
For switching/digital circuits
Features
Two elements incorporated into one package (Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Package
Code
SSMini6-F2
Pin Name
1:
Emitter (Tr1)
2:
Base (Tr1)
3:
Collector (Tr2)
M
ain
Di
sc te
on na
tin nc
ue e/
d
Basic Part Number
UNR2210
×
2
4:
Emitter (Tr2)
5:
Base (Tr2)
6:
Collector (Tr1)
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
stg
Electrical Characteristics
T
a
=
25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
pla nc
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ct
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life
an ut
d
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cy
on es
cle
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co fo
ge
.jp rm
.
/en at
/ ion
.
Rating
50
50
Unit
V
V
Absolute Maximum Ratings
T
a
=
25°C
Marking Symbol:
9V
Internal Connection
R1
10 kΩ
100
125
125
mA
°C
°C
(C1) (B2) (E2)
6
5
4
Tr1
R2
10 kΩ
mW
R2
10 kΩ
R1
10 kΩ
Tr2
–55 to +125
1
2
3
(E1) (B1) (C2)
Conditions
Min
50
50
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
MHz
I
C
=
10
µA, I
E
=
0
I
C
=
2
mA, I
B
=
0
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Ma
int
en
Collector-emitter saturation voltage
an
ce
Forward current transfer ratio
/D
Emitter-base cutoff current (Collector open)
isc
on
Collector-emitter cutoff current (Base open)
tin
Collector-base cutoff current (Emitter open)
ue
di
V
CB
=
50
V, I
E
=
0
V
CE
=
50
V, I
B
=
0
V
EB
=
6
V, I
C
=
0
0.1
0.5
0.5
V
CE
=
10
V, I
C
=
5
mA
35
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
I
C
=
10
mA, I
B
=
0.3
mA
0.25
0.2
1.2
V
CC
=
5
V, V
B
=
0.5
V, R
L
=
1
kΩ
V
CC
=
5
V, V
B
=
2.5
V, R
L
=
1
kΩ
4.9
Pl
–30%
0.8
10
+30%
1.0
150
V
CB
=
10
V, I
E
= –2 mA, f =
200
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Publication date: November
2007
SJJ00407AED
1

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描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI6-F2, 6 PIN TRANS PREBIAS DUAL NPN SSMINI6

 
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