VP0104
VP0106
VP0109
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
-40V
-60V
-90V
R
DS(ON)
(max)
8.0Ω
8.0Ω
8.0Ω
I
D(ON)
(min)
-0.5A
-0.5A
-0.5A
Order Number / Package
TO-92
VP0104N3
VP0106N3
VP0109N3
Die
†
—
—
VP0109ND
Features
❏
Free from secondary breakdown
❏
Low power drive requirement
❏
Ease of paralleling
❏
Low C
ISS
and fast switching speeds
❏
Excellent thermal stability
❏
Integral Source-Drain diode
❏
High input impedance and high gain
❏
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏
Motor controls
❏
Converters
❏
Amplifiers
❏
Switches
❏
Power supply circuits
❏
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
SGD
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
07/08/02
TO-92
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VP0104/VP0106/VP0109
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
-0.25A
I
D
(pulsed)
-0.8A
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
-0.25A
I
DRM
-0.8A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
Drain-to-Source
Breakdown Voltage
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Parameter
VP0109
VP0106
VP0104
Min
-90
-60
-40
-1.5
5.8
-1.0
-3.5
6.5
-100
-10
-1
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
150
-0.15
-0.50
-0.25
-1.2
11
6.0
0.55
190
45
22
3
4
3
8
4
-1.2
400
60
30
8
6
10
12
10
-2.0
V
ns
ns
V
DD
= -25V
I
D
= -0.5A
R
GEN
= 25Ω
I
SD
= -1.0A, V
GS
= 0V
I
SD
= -1.0A, V
GS
= 0V
pF
15
8.0
1.0
Ω
%/°C
m
V
mV/°C
nA
µA
mA
A
V
GS
= V
DS
, I
D
= -1.0mA
I
D
= -1.0mA, V
GS
= V
DS
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= -5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5V, I
D
= -0.1A
V
GS
= -10V, I
D
= -0.5A
V
GS
= -10V, I
D
= -0.5A
V
DS
= -25V, I
D
= -0.5A
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
I
D
= -1.0mA, V
GS
= 0V
Typ
Max
Unit
Conditions
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE
GENERATOR
90%
t
(ON)
R
gen
t
(OFF)
t
r
t
d(OFF)
t
F
INPUT
t
d(ON)
0V
90%
OUTPUT
V
DD
90%
10%
10%
2
Ω
D.U.T.
OUTPUT
R
L
V
DD
VP0104/VP0106/VP0109
Typical Performance Curves
Output Characteristics
-2.0
-1.0
VGS = -10V
-1.6
VGS = -10V
-1.2
-0.8
Saturation Characteristics
I
D
(amperes)
I
D
(amperes)
-0.6
-8V
-0.8
-8V
-0.4
-6V
-0.4
-6V
-0.2
-4V
0
0
-10
-20
-30
-40
-50
0
0
-2
-4
-6
-4V
-8
-10
V
DS
(volts)
Transconductance vs. Drain Current
250
2.0
V
DS
(volts)
Power Dissipation vs. Case Temperature
V
DS
= -25V
200
T
A
= -55°C
T
A
= 25°C
T
A
= 125°C
G
FS
(millisiemens)
P
D
(watts)
150
TO-92
1.0
100
50
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
-10
1.0
T
C
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
I
D
(amperes)
-1.0
0.6
TO-92(DC)
-0.1
0.4
0.2
TO-92
P
D
= 1W
T
C
= 25°C
0.01
0.1
1
10
T C = 25°C
-0.01
-0.1
-1.0
-10
-100
0
0.001
V
DS
(volts)
t
p
(seconds)
3
VP0104/VP0106/VP0109
Typical Performance Curves
BV
DSS
Variation with Temperature
1.10
50
On-Resistance vs. Drain Current
1.06
40
V
GS
= -5V
V
GS
= -10V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
1.02
30
0.98
20
0.94
10
0.90
-50
0
50
100
150
0
0
-0.3
-0.6
-0.9
-1.2
-1.5
T
j
(°C)
Transfer Characteristics
-1.0
1.6
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.6
T
A
= -55
°C
-0.8
V
DS
= -25V
T
A
= 25
°C
R
DS(ON)
@ -10V, -0.5A
1.4
V
GS(th)
(normalized)
R
DS(ON)
@ -5V, 0.1A
1.2
1.4
-0.6
V
(th)
@ -1.0mA
1.0
1.2
-0.4
T
A
= 125
°C
1.0
0.8
0.8
-0.2
0
0
-2
-4
-6
-8
-10
0.6
-50
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
-10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
-8
75
V
DS
= -10V
C (picofarads)
70 pF
V
GS
(volts)
V
DS
=
-40V
70 pF
-6
50
C
ISS
-4
25
C
OSS
-2
C
RSS
0
0
-10
-20
-30
-40
0
0
45pF
0.2
0.4
0.6
0.8
1.0
V
DS
(volts)
Q
G
(nanocoulombs)
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
07/08/02
I
D
(amperes)
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
