IS62VV25616L/LL
256K x 16 LOW VOLTAGE, 1.8V ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 70, 85, 100 ns
• CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 1.65V-1.95V V
CC
power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (7.2mm x 8.7mm)
ISSI
DESCRIPTION
®
PRELIMINARY INFORMATION
NOVEMBER 2000
The
ISSI
IS62VV25616L and IS62VV25616LL are
high-speed, 4,194,304 bit static RAMs organized as
262,144 words by 16 bits. They are fabricated using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
For the IS62VV25616L/LL, when
CE
is HIGH (deselected)
or
CE
is low and both
LB
and
UB
are HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS62VV25616L and IS62VV25616LL are packaged in
the JEDEC standard 44-pin TSOP (Type II) and 48-pin
mini BGA (7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
11/30/00
Rev. 00C
1
IS62VV25616L/LL
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
1.65V - 1.95V
1.65V - 1.95V
ISSI
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
V
CC
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Vcc Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to Vcc+0.3
–40 to +85
–0.2 to +2.6
–65 to +150
1.0
Unit
V
°C
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OL
= 0.1 mA
Min.
1.4
—
1.4
–0.3
–1
–1
Max.
—
0.2
V
CC
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
11/30/00
Rev. 00C
3
IS62VV25616L/LL
IS62VV25616LL POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
Vcc Dynamic Operating
I
CC
Supply Current
I
CC
1
Operating Supply
Current
TTL Standby Current
I
SB
1
(TTL Inputs)
OR
ULB Control
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max., V
IN
= V
IH
or V
IL
CE
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
CC
= Max.,
CE
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
5
5
—
—
5
5
—
—
Test Conditions
V
CC
= Max.,
Com.
I
OUT
= 0 mA, f = f
MAX
Ind.
V
CC
= Max.,
Com.
I
OUT
= 0 mA, f = 0
Ind.
V
CC
= Max.,
Com.
V
IN
= V
IH
or V
IL
Ind.
CE
≥
V
IH
, f = 1 MH
Z
-70
Min. Max.
—
20
—
25
—
3
—
3
—
0.3
—
0.3
-85
Min.
—
—
—
—
—
—
Max.
15
20
3
3
0.3
0.3
ISSI
-100
Min. Max.
—
10
—
15
—
3
—
3
—
0.3
—
0.3
Unit
mA
mA
mA
®
5
5
µA
OR
ULB Control
V
CC
= Max.,
CE
= V
IL
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
CC
– 0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to High-Z Output
OE
to Low-Z Output
CE
to High-Z Output
CE
to Low-Z Output
LB, UB
Access Time
LB, UB
to High-Z Output
LB, UB
to Low-Z Output
-70
Min.
Max.
70
—
10
—
—
—
5
0
10
—
0
0
—
70
—
70
35
25
—
25
—
70
25
—
-85
Min.
Max.
85
—
10
—
—
—
5
0
10
—
0
0
—
85
—
85
40
25
—
25
—
85
25
—
-100
Min.
Max.
100
—
10
—
—
—
5
0
10
—
0
0
—
100
—
100
50
30
—
30
—
100
35
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2)
t
LZCE
(2)
t
BA
t
HZB
t
LZB
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
11/30/00
Rev. 00C
5
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