MMSZxxxET1G Series,
SZMMSZxxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Specification Features
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500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range
−
2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power
−
225 W (8
X
20
ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
1
xxx MG
G
260C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
L
= 75C
Derated above 75C
Thermal Resistance, Junction−to−Ambient
(Note 3)
Thermal Resistance, Junction−to−Lead
(Note 3)
Junction and Storage Temperature Range
Symbol
P
pk
P
D
Max
225
500
6.7
340
150
−55
to +150
Unit
W
xxx = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMSZxxxET1G
Package
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
mW
mW/C
C/W
C/W
C
SZMMSZxxxET1G
MMSZxxxET3G
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
January, 2012
−
Rev. 7
1
Publication Order Number:
MMSZ2V4ET1/D
MMSZxxxET1G Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless
otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
V
Z1
(V)
(Notes 4 and 5)
Device
Marking
CL1
CL2
CL3
CL4
CL5
CL6
CL7
CL8
CL9
CM1
CM2
CM3
CM4
CM5
CM6
CM7
CM8
CM9
CN1
CN2
CN3
CN4
CN5
CN6
CN7
@ I
ZT1
= 5 mA
Min
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
Max
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
W
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
Z
ZT1
(Note 6)
V
Z2
(V)
(Notes 4 and 5)
Z
ZT2
(Note 6)
Max Reverse
Leakage Current
I
R
@ V
R
W
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
mA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
@ I
ZT2
= 1 mA
Max
2.1
2.4
2.7
2.9
3.3
3.5
4.0
4.7
5.3
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.0
15.5
17.0
19.0
21.1
23.2
25.5
Device*
MMSZ2V4ET1G
MMSZ2V7ET1G
MMSZ3V0ET1G
MMSZ3V3ET1G
MMSZ3V6ET1G
MMSZ3V9ET1G
MMSZ4V3ET1G
MMSZ4V7ET1G
MMSZ5V1ET1G
MMSZ5V6ET1G
MMSZ6V2ET1G
MMSZ6V8ET1G
MMSZ7V5ET1G
MMSZ8V2ET1G
MMSZ9V1ET1G
MMSZ10ET1G
MMSZ11ET1G
MMSZ12ET1G
MMSZ13ET1G
MMSZ15ET1G
MMSZ16ET1G
MMSZ18ET1G
MMSZ20ET1G
MMSZ22ET1G
MMSZ24ET1G
4. The type numbers shown have a standard tolerance of
5%
on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
I
Z(AC)
= 0.1 I
Z(DC),
with the AC frequency = 1 kHz.
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended choices for future use and
best overall value.
*Include SZ-prefix devices where applicable.
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2
MMSZxxxET1G Series, SZMMSZxxxET1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
V
Z1
(V)
(Notes 7 and 8)
@ I
ZT1
= 2 mA
Min
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
Nom
27
30
33
36
39
43
47
51
56
Max
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
W
80
80
80
90
130
150
170
180
200
Z
ZT1
(Note 9)
V
Z2
(V)
(Notes 7 and 8)
@ I
ZT2
= 0.1 mA
Min
25
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
Max
28.9
32
35
38
41
46
50
54
60
Z
ZT2
(Note 9)
@ I
ZT2
=
0.5 mA
W
300
300
325
350
350
375
375
400
425
Max Reverse
Leakage Current
I
R
@ V
R
mA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
Device*
MMSZ27ET1G
MMSZ30ET1G
MMSZ33ET1G
MMSZ36ET1G
MMSZ39ET1G
MMSZ43ET1G
MMSZ47ET1G
MMSZ51ET1G
MMSZ56ET1G
Device
Marking
CN8
CN9
CP1
CP2
CP3
CP4
CP5
CP6
CP7
7. The type numbers shown have a standard tolerance of
5%
on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
I
Z(AC)
= 0.1 I
Z(DC),
with the AC frequency = 1 kHz.
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended choices for future use and
best overall value.
*Include SZ-prefix devices where applicable.
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3
MMSZxxxET1G Series, SZMMSZxxxET1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
−1
−2
1
−3
2
TYPICAL T
C
VALUES
FOR MMSZxxxT1G SERIES,
SZMMSZxxxT1G SERIES
V
Z
@ I
ZT
100
TYPICAL T
C
VALUES
FOR MMSZxxxT1G SERIES,
SZMMSZxxxT1G SERIES
V
Z
@ I
ZT
VZ, TEMPERATURE COEFFICIENT (mV/
C)
10
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
VZ, TEMPERATURE COEFFICIENT (mV/
C)
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
−
55C to +150C)
1.2
P D, POWER DISSIPATION (WATTS)
1.0
0.8
0.6
0.4
0.2
0
P
D
versus T
A
P
D
versus T
L
1000
Figure 2. Temperature Coefficients
(Temperature Range
−
55C to +150C)
Ppk, PEAK SURGE POWER (WATTS)
RECTANGULAR
WAVEFORM, T
A
= 25C
100
10
0
25
50
75
100
T, TEMPERATURE (C)
125
150
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z ZT, DYNAMIC IMPEDANCE (
)
T
J
= 25C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMSZ5267BT1G)
91 V (MMSZ5270BT1G)
I
Z
= 1 mA
5 mA
20 mA
10
100
100
10
150C
1
0.4
25C
0C
75C
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
1.1
1.2
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
0.5
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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4
MMSZxxxET1G Series, SZMMSZxxxET1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
C, CAPACITANCE (pF)
100
BIAS AT
50% OF V
Z
NOM
10
T
A
= 25C
1000
I R , LEAKAGE CURRENT (
A)
100
10
1
0.1
0.01
+ 25C
−55C
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
+150C
0.001
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
0.00001
0
Figure 7. Typical Capacitance
100
100
Figure 8. Typical Leakage Current
T
A
= 25C
T
A
= 25C
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
10
10
1
1
0.1
0.1
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 9. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
20
40
t, TIME (ms)
t
P
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
60
80
Figure 11. 8
20
ms
Pulse Waveform
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