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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2708TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2708TP which has a heat spreader is N-
channel MOS Field Effect Transistor designed for
DC/DC converter and power management applications
of notebook computer.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power HSOP8
Note
µ
PA2708TP-E1
µ
PA2708TP-E1-AZ
µ
PA2708TP-E2
Power HSOP8
Power HSOP8
FEATURES
•
Low on-state resistance
R
DS(on)1
= 5.5 mΩ MAX. (V
GS
= 10 V, I
D
= 9.0 A)
R
DS(on)2
= 7.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 9.0 A)
•
Low C
iss
: C
iss
= 4700 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Small and surface mount package (Power HSOP8)
µ
PA2708TP-E2-AZ
Note
Power HSOP8
Note
Pb-free (This product does not contain Pb in
external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±40
±68
34
4.3
150
−55
to +150
17
28.9
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Ambient
Channel to Case
Note
R
th(ch-A)
R
th(ch-C)
96.2
3.68
°C/W
°C/W
Note
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17034EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
2004
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