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28F640J5

产品描述2M X 16 FLASH 5V PROM, 120 ns, PDSO56
产品类别存储   
文件大小372KB,共51页
制造商Intel(英特尔)
官网地址http://www.intel.com/
下载文档 详细参数 选型对比 全文预览

28F640J5概述

2M X 16 FLASH 5V PROM, 120 ns, PDSO56

2M × 16 FLASH 5V 可编程只读存储器, 120 ns, PDSO56

28F640J5规格参数

参数名称属性值
功能数量1
端子数量56
最大工作温度85 Cel
最小工作温度-20 Cel
最大供电/工作电压5.5 V
最小供电/工作电压4.5 V
额定供电电压5 V
最大存取时间120 ns
加工封装描述16 X 23.70 MM, SSOP-56
状态DISCONTINUED
工艺CMOS
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE, SHRINK PITCH
表面贴装Yes
端子形式GULL WING
端子间距0.8000 mm
端子涂层TIN LEAD
端子位置DUAL
包装材料PLASTIC/EPOXY
温度等级OTHER
内存宽度16
组织2M X 16
存储密度3.36E7 deg
操作模式ASYNCHRONOUS
位数2.10E6 words
位数2M
备用存储器宽度8
内存IC类型FLASH 5V PROM
串行并行PARALLEL

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5 Volt Intel StrataFlash
®
Memory
28F320J5 and 28F640J5 (x8/x16)
Datasheet
Product Features
s
s
s
s
s
High-Density Symmetrically-Blocked
Architecture
— 64 128-Kbyte Erase Blocks (64 M)
— 32 128-Kbyte Erase Blocks (32 M)
4.5 V–5.5 V V
CC
Operation
— 2.7 V–3.6 V and 4.5 V–5.5 V I/O
Capable
120 ns Read Access Time (32 M)
150 ns Read Access Time (64 M)
Enhanced Data Protection Features
— Absolute Protection with
V
PEN
= GND
— Flexible Block Locking
— Block Erase/Program Lockout during
Power Transitions
Industry-Standard Packaging
— SSOP Package (32, 64 M)
TSOP Package (32 M)
s
s
s
s
s
s
Cross-Compatible Command Support
— Intel Basic Command Set
— Common Flash Interface
— Scalable Command Set
32-Byte Write Buffer
— 6 µs per Byte Effective Programming
Time
6,400,000 Total Erase Cycles (64 M)
3,200,000 Total Erase Cycles (32 M)
— 100,000 Erase Cycles per Block
Automation Suspend Options
— Block Erase Suspend to Read
— Block Erase Suspend to Program
System Performance Enhancements
— STS Status Output
Operating Temperature –20 °C to + 85 °C
(–40 °C to +85 °C on .25
micron ETOX VI)
process technology parts)
Capitalizing on two-bit-per-cell technology, 5 Volt Intel StrataFlash
®
memory products provide 2X the bits
in 1X the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory
devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result,
Intel StrataFlash components are ideal for code or data applications where high density and low cost are
required. Examples include networking, telecommunications, audio recording, and digital imaging.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel’s 0.4 micron ETOX™ V process technology and Intel’s 0.25 micron ETOX VI
process technology, 5 Volt Intel StrataFlash memory provides the highest levels of quality and reliability.
Notice:
This document contains information on products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
Order Number: 290606-015
April 2002

28F640J5相似产品对比

28F640J5 28F320J5_02 DA28F640J5-150 DA28F320J5-120 E28F320J5-120 E28F320J5A-120 DA28F320J5A-120 DA28F640J5A-150 28F320J5
描述 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 150 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56 2M X 16 FLASH 5V PROM, 120 ns, PDSO56
功能数量 1 1 1 1 1 1 1 1 1
端子数量 56 56 56 56 56 56 56 56 56
表面贴装 Yes Yes YES YES YES YES YES YES Yes
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
温度等级 OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER OTHER
内存宽度 16 16 16 16 16 16 16 16 16
组织 2M X 16 2M X 16 4MX16 2MX16 2MX16 2MX16 2MX16 4MX16 2M X 16
零件包装代码 - - SSOP SSOP TSOP TSOP SSOP SSOP -
包装说明 - - SSOP, SOP56,.6,32 SSOP, SOP56,.6,32 14 X 20 MM, TSOP-56 14 X 20 MM, TSOP-56 SSOP, SOP56,.6,32 16 X 23.70 MM, SSOP-56 -
针数 - - 56 56 56 56 56 56 -
Reach Compliance Code - - unknow unknow unknow unknow unknow unknow -
ECCN代码 - - 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A -
最长访问时间 - - 150 ns 120 ns 120 ns 120 ns 150 ns 150 ns -
备用内存宽度 - - 8 8 8 8 8 8 -
命令用户界面 - - YES YES YES YES YES YES -
通用闪存接口 - - YES YES YES YES YES YES -
数据轮询 - - NO NO NO NO NO NO -
JESD-30 代码 - - R-PDSO-G56 R-PDSO-G56 R-PDSO-G56 R-PDSO-G56 R-PDSO-G56 R-PDSO-G56 -
长度 - - 23.7 mm 23.7 mm 18.4 mm 18.4 mm 23.7 mm 23.7 mm -
内存密度 - - 67108864 bi 33554432 bi 33554432 bi 33554432 bi 33554432 bi 67108864 bi -
内存集成电路类型 - - FLASH FLASH FLASH FLASH FLASH FLASH -
部门数/规模 - - 64 32 32 32 32 64 -
字数 - - 4194304 words 2097152 words 2097152 words 2097152 words 2097152 words 4194304 words -
字数代码 - - 4000000 2000000 2000000 2000000 2000000 4000000 -
工作模式 - - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
最高工作温度 - - 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C -
最低工作温度 - - -20 °C -20 °C -20 °C -20 °C -20 °C -20 °C -
封装主体材料 - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 - - SSOP SSOP TSOP1 TSOP1 SSOP SSOP -
封装等效代码 - - SOP56,.6,32 SOP56,.6,32 TSSOP56,.8,20 TSSOP56,.8,20 SOP56,.6,32 SOP56,.6,32 -
封装形状 - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 - - SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, SHRINK PITCH -
并行/串行 - - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL -
电源 - - 3/3.3,5 V 3/3.3,5 V 3/3.3,5 V 3/3.3,5 V 3/3.3,5 V 3/3.3,5 V -
编程电压 - - 5 V 5 V 5 V 5 V 5 V 5 V -
认证状态 - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
就绪/忙碌 - - YES YES YES YES YES YES -
座面最大高度 - - 1.9 mm 1.9 mm 1.2 mm 1.2 mm 1.9 mm 1.9 mm -
部门规模 - - 128K 128K 128K 128K 128K 128K -
最大待机电流 - - 0.000125 A 0.000125 A 0.000125 A 0.000125 A 0.000125 A 0.000125 A -
最大压摆率 - - 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA -
最大供电电压 (Vsup) - - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V -
最小供电电压 (Vsup) - - 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V -
标称供电电压 (Vsup) - - 5 V 5 V 5 V 5 V 5 V 5 V -
技术 - - CMOS CMOS CMOS CMOS CMOS CMOS -
端子节距 - - 0.8 mm 0.8 mm 0.5 mm 0.5 mm 0.8 mm 0.8 mm -
切换位 - - NO NO NO NO NO NO -
类型 - - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE -
宽度 - - 13.3 mm 13.3 mm 14 mm 14 mm 13.3 mm 13.3 mm -
Base Number Matches - - 1 1 1 1 1 1 -
是否Rohs认证 - - - 不符合 不符合 不符合 不符合 不符合 -
JESD-609代码 - - - e0 e0 e0 e0 e0 -
峰值回流温度(摄氏度) - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
端子面层 - - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
处于峰值回流温度下的最长时间 - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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