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UPD44645084F5-E50-FQ1-A

产品描述IC,SYNC SRAM,QDR,8MX8,CMOS,BGA,165PIN,PLASTIC
产品类别存储    存储   
文件大小380KB,共40页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
标准  
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UPD44645084F5-E50-FQ1-A概述

IC,SYNC SRAM,QDR,8MX8,CMOS,BGA,165PIN,PLASTIC

UPD44645084F5-E50-FQ1-A规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码BGA
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间0.45 ns
最大时钟频率 (fCLK)200 MHz
I/O 类型SEPARATE
JESD-30 代码R-PBGA-B165
内存密度67108864 bit
内存集成电路类型STANDARD SRAM
内存宽度8
端子数量165
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8MX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
电源1.5/1.8,1.8 V
认证状态Not Qualified
最小待机电流1.7 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
Base Number Matches1

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PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD44645084, 44645094, 44645184, 44645364
72M-BIT QDR
TM
II SRAM
4-WORD BURST OPERATION
Description
The
μ
PD44645084 is a 8,388,608-word by 8-bit, the
μ
PD44645094 is a 8,388,608-word by 9-bit, the
μ
PD44645184 is a
4,194,304-word by 18-bit and the
μ
PD44645364 is a 2,097,152-word by 36-bit synchronous quad data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44645084,
μ
PD44645094,
μ
PD44645184 and
μ
PD44645364 integrate unique synchronous peripheral
circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive
edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (15 x 17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Four-tick burst for reduced address frequency
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.
User programmable impedance output
Fast clock cycle time : 3.7 ns (270 MHz) , 4.0 ns (250 MHz) , 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M18232EJ2V0DS00 (2nd edition)
Date Published February 2007 NS CP(N)
Printed in Japan
The mark <R> shows major revised points.
2006
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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