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UPD44325092BF5-E33Y-FQ1-A

产品描述4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
产品类别存储    存储   
文件大小387KB,共36页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
标准
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UPD44325092BF5-E33Y-FQ1-A概述

4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165

UPD44325092BF5-E33Y-FQ1-A规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codeunknown
ECCN代码3A991
最长访问时间0.45 ns
最大时钟频率 (fCLK)300 MHz
I/O 类型SEPARATE
JESD-30 代码R-PBGA-B165
长度17 mm
内存密度37748736 bit
内存集成电路类型QDR SRAM
内存宽度9
功能数量1
端子数量165
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4MX9
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
电源1.5/1.8,1.8 V
认证状态Not Qualified
座面最大高度1.46 mm
最大待机电流0.43 A
最小待机电流1.7 V
最大压摆率0.7 mA
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度15 mm
Base Number Matches1

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Datasheet
μ
PD44325092B
μ
PD44325182B
μ
PD44325362B
36M-BIT QDR
TM
II SRAM
2-WORD BURST OPERATION
Description
The
μ
PD44325092B is a 4,194,304-word by 9-bit, the
μ
PD44325182B is a 2,097,152-word by 18-bit and the
μ
PD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44325092B,
μ
PD44325182B and
μ
PD44325362B integrate unique synchronous peripheral circuitry
and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the
positive edge of K and K#. These products are suitable for application which require synchronous operation,
high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
R10DS0038EJ0200
Rev.2.00
August 11, 2011
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (15 x 17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20
μ
s after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 3.3 ns (300 MHz), 3.5 ns (287 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0038EJ0200 Rev.2.00
August 11, 2011
Page 1 of 36

 
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