RN1901AFS~RN1906AFS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1901AFS, RN1902AFS, RN1903AFS
RN1904AFS, RN1905AFS, RN1906AFS
Switching, Inverter Circuit, Interface Circuit and Driver
Circuit Applications
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Unit: mm
•
•
0.35 0.35
1.0±0.05
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and saves assembly costs.
0.7±0.05
Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
1
2
3
6
5
4
0.1±0.05
•
Complementary to the RN2901AFS~RN2906AFS
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1901AFS
RN1902AFS
R2
RN1903AFS
RN1904AFS
E
RN1905AFS
RN1906AFS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
fS6
JEDEC
JEITA
TOSHIBA
1. EMITTER1
2. BASE1
3. COLLECTOR2
4.
EMITTER2
5. BASE2
6. COLLECTOR1
―
―
2-1F1D
Weight: 0.001 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1901AFS~1906AFS
RN1901AFS~1906AFS
RN1901AFS~1904AFS
RN1905AFS, 1906AFS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
10
5
80
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
RN1901AFS~RN1906AFS
RN1901AFS
IC - VI (ON)
100
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE = 0.2 V
RN1902AFS
IC - VI (ON)
100
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE = 0.2 V
10
10
Ta=100°C
1
25
-25
Ta=100°C
1
25
-25
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
100
COLLECTOR CURRENT IC (mA)
RN1903AFS
IC - VI (ON)
100
COLLECTOR CURRENT IC (mA)
RN1904AFS
IC - VI (ON)
COMMON EMMITER
VCE = 0.2 V
COMMON EMITTER
VCE = 0.2 V
10
Ta = 100°C
25
1
-25
10
Ta = 100°C
25
1
-25
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
RN1905AFS
100
COLLECTOR CURRENT IC (mA)
IC - VI (ON)
100
COLLECTOR CURRENT IC (mA)
RN1906AFS
IC - VI (ON)
COMMON EMITTER
VCE = 0.2 V
COMMON EMITTER
VCE = 0.2 V
10
10
Ta = 100°C
1
25
-25
Ta = 100°C
1
25
-25
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
0.1
0.1
1
10
INPUT VOLTAGE
VI (ON) (V)
100
3
2007-11-01
RN1901AFS~RN1906AFS
RN1901AFS
IC - VI (OFF)
10000
COLLECTOR CURRENT IC (uA)
COMMON EMITTER
VCE = 5V
RN1902AFS
IC - VI (OFF)
10000
COLLECTOR CURRENT
IC
(uA)
COMMON EMITTER
VCE = 5V
1000
Ta = 100°C
25
-25
1000
Ta = 100°C
25
-25
100
100
10
0.2
0.6
1
1.4
1.8
2.2
INPUT VOLTAGE
VI (OFF) (V)
10
0.2
0.6
1
1.4
1.8
2.2
INPUT VOLTAGE
VI (OFF) (V)
RN1903AFS
10000
COLLECTOR CURRENT IC (uA)
IC - VI (OFF)
10000
COLLECTOR CURRENT IC (uA)
RN1904AFS
IC - VI (OFF)
COMMON EMMITER
VCE= 5V
COMMON EMITTER
VCE= 5V
1000
Ta = 100°C
25
-25
1000
Ta = 100°C
-25
100
100
25
10
0.4
0.8
1.2
1.6
2
2.4
INPUT VOLTAGE
VI (OFF) (V)
10
0
0.5
1
1.5
2
2.5
3
INPUT VOLTAGE
VI (OFF) (V)
RN1905AFS
10000
COLLECTOR CURRENT IC (uA)
IC - VI (OFF)
10000
COLLECTOR CURRENT IC (uA)
RN1906AFS
IC - VI (OFF)
COMMON EMITTER
VCE = 5V
COMMON EMITTER
VCE = 5V
1000
Ta = 100°C
25
-25
1000
Ta = 100°C
25
-25
100
100
10
0.2
0.4
0.6
0.8
1
1.2
INPUT VOLTAGE
VI (OFF) (V)
10
0.2
0.4
0.6
0.8
1
1.2
INPUT VOLTAGE
VI (OFF) (V)
4
2007-11-01
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