DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA651TT
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA651TT is a switching device, which can be driven directly by a
1.8 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
PACKAGE DRAWING (Unit: mm)
2.0±0.2
0.25±0.1
6
5
4
2.1±0.1
1.6
0
~
0.05
FEATURES
•
1.8 V drive available
•
Low on-state resistance
R
DS(on)1
= 69 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−2.5
A)
R
DS(on)2
= 88 mΩ MAX. (V
GS
=
−2.5
V, I
D
=
−2.5
A)
R
DS(on)3
= 142 mΩ MAX. (V
GS
=
−1.8
V, I
D
=
−1.5
A)
1
2
3
0.65
0.65
S
MAX. 0.8
ORDERING INFORMATION
0.05 S
PART NUMBER
PACKAGE
6pinWSOF (1620)
0.4±0.1
µ
PA651TT
0.15
+0.1
−0.05
Marking: WE
1,2,5,6 : Drain
3
: Gate
4
: Source
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
−20
m8.0
m5.0
m20
0.2
1.4
150
−55
to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Body
Diode
Drain
0.2
+0.1
−0.05
0.1
M
S
EQUIVALENT CIRCUIT
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5 sec.
P
T2
T
ch
T
stg
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G16203EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2002
µ
PA651TT
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
V
DD
=
−
16 V
V
GS
=
−
4.0 V
I
D
=
−
5.0 A
I
F
= 5.0 A, V
GS
= 0 V
TEST CONDITIONS
V
DS
=
−
20 V, V
GS
= 0 V
V
GS
=
m
8.0 V, V
DS
= 0 V
V
DS
=
−
10 V, I
D
=
−
1.0 mA
V
DS
=
−
10 V, I
D
=
−
2.5 A
V
GS
=
−
4.5 V, I
D
=
−
2.5 A
V
GS
=
−
2.5 V, I
D
=
−
2.5 A
V
GS
=
−
1.8 V, I
D
=
−
1.5 A
V
DS
=
−
10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
=
−
10 V, I
D
=
−
2.5 A
V
GS
=
−
4.0 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
UNIT
−
10
m
10
−
0.45
4.0
55
66
85
600
120
75
45
200
435
345
5.5
1.2
2.1
0.94
69
88
142
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
−
1.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS (−)
0
10%
V
GS
90%
I
G
=
−2
mA
50
Ω
R
L
V
DD
V
DD
V
DS (−)
90%
90%
10%
10%
PG.
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet G16203EJ1V0DS
µ
PA651TT
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.6
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
25
50
75
100
125
150
175
100
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
80
60
40
20
0
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
−100
FORWARD BIAS SAFE OPERATING AREA
R
D S (o n )
L im ite d
(V
G S
=
−
4 .5 V )
I
D (p u lse )
I
D
- Drain Current - A
−10
I
D (D C )
PW = 1 m s
−1
10 m s
1 00 m s
5 s
S ing le P u ls e
M o u nted on F R -4 b o a rd o f
2
5 0 c m × 1.1 m m
−0.1
−0.01
−0.1
−1
−10
−100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
Mounted on FR-4 board of
2
50 cm × 1.1 mm
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
100
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16203EJ1V0DS
3
µ
PA651TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
P u ls e d
FORWARD TRANSFER CHARACTERISTICS
−100
−10
V
DS
=
−
10 V
P u ls ed
−20
−16
V
G S
=
−
4 .5 V
I
D
- Drain Current - A
I
D
- Drain Current - A
−12
−
2 .5 V
−1
−0.1
−0.01
−0.001
−0.0001
T
A
= 12 5
°C
7 5°C
2 5°C
−
2 5°C
−8
−4
−
1 .8 V
0
0
−0.2
−0.4
−0.6
−0.8
−1
−1.2 −1.4
−1.6
0
−0.5
−1
−1.5
−2
−2.5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
1
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
=
−
10 V
P u ls e d
V
GS(off)
- Gate Cut-off Voltage - V
V
D S
=
−
10 V
I
D
=
−
1 m A
0.9
0.8
10
0.7
0.6
1
T
A
=
−
2 5
°C
2 5
°C
7 5
°C
1 2 5
°C
0.5
0.4
-50
0
50
10 0
15 0
0 .1
−0.01
−0.1
−1
−10
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
140
120
100
80
60
40
20
0
V
G S
=
−
4 .5 V
P u ls e d
T
A
= 1 2 5
°C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
140
120
100
80
60
40
20
0
V
G S
=
−
2 .5 V
P u ls e d
T
A
= 1 2 5
°C
7 5
°C
2 5
°C
−
2 5
°C
7 5
°C
2 5
°C
−
2 5
°C
−0.01
−0.1
−1
−10
−100
−0.01
−0.1
−1
−10
−100
I
D
- Drain Current - A
I
D
- Drain Current - A
4
Data Sheet G16203EJ1V0DS
µ
PA651TT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
140
120
100
80
60
40
20
0
V
G S
=
−
1 .8 V
P u ls e d
T
A
= 1 2 5
°C
7 5
°C
2 5
°C
−
2 5
°C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
140
P u ls e d
120
100
80
60
40
20
0
−
1 .5 A
I
D
=
−
2 .5 A
−0.01
−0.1
−1
−10
−100
0
−2
−4
−6
−8
−10
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
140
P u ls e d
120
100
80
60
40
20
0
-5 0
0
50
100
150
V
G S
=
−
1 .8 V
−
2 .5 V
−
4 .5 V
10000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0 V
f = 1 MHz
C
iss
, C
oss
, C
rss
- Capacitance - pF
1000
C
is s
100
C
oss
C
rss
10
−0.1
−1
−10
−100
T
ch
- Channel Temperature -
°C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
10000
V
DD
=
−
10 V
V
G S
=
−
4 .0 V
R
G
= 10
Ω
1000
t
d ( o ff)
t
f
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−5
I
D
=
−5.0
A
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
−4
V
DD
=
−16
V
−10
V
−4
V
−3
t
r
t
d (o n )
−2
10
−1
1
0
0
1
2
3
4
5
6
−0.01
−0.1
−1
−10
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet G16203EJ1V0DS
5
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